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Title: Liquid gallium cooling of silicon crystals in high intensity photon beam

Conference ·
OSTI ID:6478993

The high-brilliance, insertion-device-based, photon beams of the next generation of synchrotron sources will deliver large thermal loads (1 kW to 10 kW) to the first optical elements. Considering the problems that present synchrotron users are experiencing with beams from recently installed insertion devices, new and improved methods of cooling these first optical elements, particularly when they are diffraction crystals, are clearly needed. A series of finite element calculations were performed to test the efficiency of new cooling geometries and new cooling fluids. The best results were obtained with liquid Ga metal flowing in channels just below the surface of the crystal. Ga was selected because of its good thermal conductivity and thermal capacity, low melting point, high boiling point, low kinetic viscosity, and very low vapor pressure. Its very low vapor pressure, even at elevated temperatures, makes it especially attractive in uhv conditions. A series of experiments were conducted at CHESS in February of 1988 that compared liquid gallium cooled silicon diffraction crystals with water cooled crystals. 2 refs., 16 figs., 1 tab.

Research Organization:
Argonne National Lab., IL (USA)
DOE Contract Number:
W-31109-ENG-38
OSTI ID:
6478993
Report Number(s):
CONF-8808141-8; ON: DE89005875
Resource Relation:
Conference: 3. international conference on synchrotron radiation instrumentation, Tokyo, Japan, 29 Aug 1988; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English