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Title: Silicon sheet growth by the inverted Stepanov technique. Final report, March 22, 1976--May 31, 1977

Technical Report ·
DOI:https://doi.org/10.2172/5078255· OSTI ID:5078255

The feasibility of growing silicon ribbons by the inverted ribbon growth process has been established using both nonwetting boron nitride (BN) dies as well as wetting composite dies coated with chemical vapor deposited silicon nitride (CVD Si/sub 3/N/sub 4/). The former can be termed as the inverted Stepanov process, the latter as the inverted edge-defined film-fed growth (EFG) process. Flat die and V-shaped crucible-die configurations have been employed. The shift of the die material from nonwetting BN to nonwetting SiO/sub 2/ was more difficult than anticipated. The V-shaped susceptor has been modified to decrease the vertical gradient inside the susceptor in order to minimize the SiO formation and the related hysteresis. Preliminary evaluation of the reactivity of liquid silicon with CVD Si/sub 3/N/sub 4/ and CVD Si/sub 3/O/sub x/N/sub y/ indicaped that these materials are considerably more resistant to reaction with and/or dissolution in silicon than other materials examined to date. Silicon ribbon growth was carried out using CVD Si/sub 3/N/sub 4/ coated composite dies in the V-shaped crucible-die configuration. A one-dimensional heat flow model has been developed to simulate numerically the major thermal aspects of the inverted Stepanov growth process.

Research Organization:
RCA Labs., Princeton, N.J. (USA)
DOE Contract Number:
NAS-7-100-954465
OSTI ID:
5078255
Report Number(s):
DOE/JPL/954465-2; PRRL-77-CR-22
Country of Publication:
United States
Language:
English