Silicon sheet growth by the inverted Stepanov technique. Quarterly report No. 3

Technical Report · Wed Dec 01 04:00:00 EST 1976

DOI:https://doi.org/10.2172/7117191· OSTI ID:7117191

Kim, K. M.; Cullen, G. W.; Berkman, S.; Bell, A. E.

Efforts were continued to overcome the instabilities experienced when silica dies are used for growth of silicon ribbon in the inverted Stepanov configuration. These instabilities are associated primarily with the formation and evolution of the silicon monoxide; the escape of the gas causes hysteresis of the contact angle and mechanical vibration of the melt. As a result of this, the meniscus during the ribbon growth is not ''pinned'' at the die edge, but is in constant motion. The V-shaped susceptor has been modified to decrease the vertical gradient inside the susceptor in order to minimize the SiO formation and the related hysteresis. A pressure differential has also been applied across the melt in an effort to suppress the hysteresis. Various types of thermal trimmers have been tried to provide suitable thermal gradients at the solid-liquid ribbon growth interface. So far, the instabilities have not been suppressed sufficiently to allow for stable ribbon growth. The thermal stress exerted on the ribbon during growth can be reduced by minimizing the curvature in the ribbon temperature profile. (WDM)

• Research Organization: RCA Labs., Princeton, NJ (USA)
• DOE Contract Number: NAS-7-100-954465
• OSTI ID: 7117191
• Report Number(s): ERDA/JPL/954465-76/3; PRRL-76-CR-58
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CRYSTAL GROWTH
ELEMENTS
SEMIMETALS
SILICON
STABILITY
TEMPERATURE GRADIENTS