Silicon sheet growth by the Inverted Stepanov Technique. Quarterly report No. 2, annual report
IST silicon ribbon growth has been pursued with SiO/sub 2/ die, and efforts have been made to improve the stability of the ribbon growth. By grounding both the susceptor and the metal shield of the thermocouple, it has been possible to measure a more realistic temperature distribution accurately without any rf interferences. Various thermal modifiers are being designed and tested to achieve a satisfactory thermal gradient for the stable ribbon growth. The growth apparatus has been modified to supplement the gravity feed with gas pressure. The stability of the ribbon growth has improved significantly with a small pressure differential (approximately 1 mm Hg). Using a one-dimensional computer simulation of the growing ribbon, which now includes the term which corresponds to convective heat transport within the ribbon, we have examined the influence of the growth velocity on the height of the molten zone and the thermal characteristics of the growing ribbon. Results are presented for both high (1300 K) and low (300 K) ambient temperature, and the effect of varying the die temperature and the ribbon thickness is also examined. Cost estimates of the IST silicon ribbon growth are initiated.
- Research Organization:
- RCA Labs., Princeton, NJ (USA)
- DOE Contract Number:
- NAS-7-100-954465
- OSTI ID:
- 7237814
- Report Number(s):
- ERDA/JPL/954465-76/2; PRRL-76-CR-43
- Country of Publication:
- United States
- Language:
- English
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