Studies in semiconducting metal oxides in conjunction with silicon for solid state gas sensors. Progress report for April 1, 1977--March 31, 1978
ZnO films have been reproducibly grown using chemical deposition and radio-frequency sputtering techniques. These films are polycrystalline or amorphous, but are stable, uniform and lend themselves to material characterization by Auger and x-ray analysis techniques, and electrical measurements. SnO/sub 2/ films have been reproducibly grown by chemical vapor deposition, vacuum deposition and radio-frequency sputtering techniques. These films are also polycrystalline or amorphous, and lend themselves to material characterization and measurements. By vacuum deposition techniques, Si-SnO/sub 2/ heterojunctions have been grown, which exhibit good rectification properties. An original thermodynamic analysis of the growth of SnO/sub 2/ by a chemical vapor deposition technique based on the reaction between SnCl/sub 4/ and H/sub 2/O has been developed and submitted for publication. Pd-SiO/sub 2/-Si Schottky barrier diodes exhibiting excellent rectification properties have been successfully fabricated. A formalism has been established for the analysis of the behavior of these devices in the presence of H/sub 2/, H/sub 2/S and CO. The ZnO films grown by chemical deposition have proven to be sensitive to CO and CH/sub 4/. Sputtered ZnO films are sensitive to O/sub 2/ and H/sub 2/. SnO/sub 2/ films grown by chemical vapor deposition are not very sensitive to gases. Sputtered films, however, are very sensitive to H/sub 2/ and H/sub 2/S. The Pd-SiO/sub 2/-Si diodes are extremely sensitive to H/sub 2/, H/sub 2/S and NH/sub 3/, and, under certain conditions, to CO. A microprocessor data processing system has been developed incorporating gas sensors in the presence of a variety of gases and gas mixtures.
- Research Organization:
- Carnegie-Mellon Univ., Pittsburgh, Pa. (USA)
- DOE Contract Number:
- EE-77-S-02-4346
- OSTI ID:
- 5003410
- Report Number(s):
- COO-4346-1; TRN: 78-010772
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
FILMS
FABRICATION
PHYSICAL PROPERTIES
PALLADIUM
TIN OXIDES
ZINC OXIDES
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
POLYCRYSTALS
SEMICONDUCTOR DIODES
SILICON OXIDES
SPUTTERING
CHALCOGENIDES
CHEMICAL COATING
CRYSTALS
DEPOSITION
ELEMENTS
METALS
OXIDES
OXYGEN COMPOUNDS
PLATINUM METALS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SURFACE COATING
TIN COMPOUNDS
TRANSITION ELEMENTS
ZINC COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360603 - Materials- Properties
360201 - Ceramics
Cermets
& Refractories- Preparation & Fabrication
360204 - Ceramics
Cermets
& Refractories- Physical Properties