The Role of Electron Transport and Trapping in MOS Total-Dose Modeling
Conference
·
OSTI ID:3573
Deep and shallow electron traps form in irradiated thermal SiO{sub 2} as a natural response to hole transport and trapping. The density and stability of these defects are discussed, as are their implications for total-dose modeling.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 3573
- Report Number(s):
- SAND99-0355C; TRN: US0101412
- Resource Relation:
- Conference: 1999 Nuclear and Space Radiation Effects Conference (NSREC), Norfolk, VA (US), 07/12/1999--07/16/1999; Other Information: PBD: 10 Feb 1999
- Country of Publication:
- United States
- Language:
- English
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