The Role of Electron Transport and Trapping in MOS Total-Dose Modeling

Journal Article · Mon Jul 19 04:00:00 EDT 1999 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.819116· OSTI ID:9469

Fleetwood, D M ^[1]; Winokur, P S; Riewe, L C; Flament, O; Paillet, P; Leray, J L

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1. Sandia National Laboratories

Radiation-induced hole and electron transport and trapping are fundamental to MOS total-dose models. Here we separate the effects of electron-hole annihilation and electron trapping on the neutralization of radiation-induced charge during switched-bias irradiation for hard and soft oxides, via combined thermally stimulated current (TSC) and capacitance-voltage measurements. We also show that present total-dose models cannot account for the thermal stability of deeply trapped electrons near the Si/SiO{sub 2} interface, or the inability of electrons in deep or shallow traps to contribute to TSC at positive bias following (1) room-temperature, (2) high-temperature, or (3) switched-bias irradiation. These results require revisions of modeling parameters and boundary conditions for hole and electron transport in SiO{sub 2}. The nature of deep and shallow electron traps in the near-interfacial SiO{sub 2} is discussed.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 9469
• Report Number(s): SAND99-0355J
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNIHILATION
BOUNDARY CONDITIONS
ELECTRONS
HOLES
IRRADIATION
MATHEMATICAL MODELS
RADIATION TRANSPORT
SILICON
SILICON OXIDES
STABILITY
TRAPPED ELECTRONS