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Title: Color center in β-Ga2O3 emitting at the telecom range

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/5.0179921· OSTI ID:2315026

Transition metal (TM) ions incorporated into a host from a wide bandgap semiconductor are recognized as a promising system for quantum technologies with enormous potential. In this work, we report on a TM color center in β-Ga2O3 with physical properties attractive for quantum information applications. The center is found to emit at 1.316 μm and exhibits weak coupling to phonons, with optically addressable higher-lying excited states, beneficial for single-photon emission within the telecom range (O-band). Using magneto-photoluminescence (PL) complemented by time-resolved PL measurements, we identify the monitored emission to be internal 1E→3A2 spin-forbidden transitions of a 3d8 TM ion with a spin-triplet ground state—a possible candidate for a spin qubit. We tentatively attribute this color center to a complex involving a sixfold coordinated Cu3+ ion.

Research Organization:
Washington State Univ., Pullman, WA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); US Air Force Office of Scientific Research (AFOSR)
Grant/Contract Number:
FG02-07ER46386; FA9550- 21-1-0078
OSTI ID:
2315026
Journal Information:
Applied Physics Letters, Vol. 124, Issue 4; ISSN 0003-6951
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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