Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

Ghadi, Hemant; McGlone, Joe F.; Cornuelle, Evan; Senckowski, Alexander; Sharma, Shivam; Wong, Man Hoi; Singisetti, Uttam; Frodason, Ymir Kalmann; Peelaers, Hartwin; Lyons, John L.; Varley, Joel B.; Van de Walle, Chris G.; Arehart, Aaron; Ringel, Steven A.

doi:10.1063/5.0160541

Title: Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies

Journal Article · Tue Nov 07 00:00:00 EST 2023 · APL Materials

DOI:https://doi.org/10.1063/5.0160541· OSTI ID:2280490

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The Ohio State University, Columbus, OH (United States)
University of Massachusetts, Lowell, MA (United States)
University of Buffalo, NY (United States)
University of Oslo (Norway)
University of Kansas, Lawrence, KS (United States)
Naval Research Laboratory (NRL), Washington, DC (United States)
Lawrence Livermore National Laboratory (LLNL), San Francisco, CA (United States)
University of Santa Barbara, CA (United States)

The ability to achieve highly resistive beta-phase gallium oxide (β-Ga₂O₃) layers and substrates is critical for β-Ga₂O₃ high voltage and RF devices. To date, the most common approach involves doping with iron (Fe), which generates a moderately deep acceptor-like defect state located at E_C-0.8 eV in the β-Ga₂O₃ bandgap. Recently, there has been growing interest in alternative acceptors, such as magnesium (Mg) and nitrogen (N), due to their predicted deeper energy levels, which could avoid inadvertent charge modulation during device operation. In this work, a systematic study that makes direct correlations between the introduction of N using ion implantation and the observation of a newly observed deep level at E_C-2.9 eV detected by deep-level optical spectroscopy (DLOS) is presented. The concentration of this state displayed a monotonic dependence with N concentration over a range of implant conditions, as confirmed by secondary ion mass spectrometry (SIMS). With a near 1:1 match in absolute N and E_C-2.9 eV trap concentrations from SIMS and DLOS, respectively, which also matched the measured removal of free electrons from capacitance-voltage studies, this indicates that N contributes a very efficiently incorporated compensating defect. Density functional theory calculations confirm the assignment of this state to be an N (0/-1) acceptor with a configuration of N occupying the oxygen site III [N_O(III)]. The near ideal efficiency for this state to compensate free electrons and its location toward the midgap region of the β-Ga₂O₃ bandgap demonstrates the potential of N doping as a promising approach for producing semi-insulating β-Ga₂O₃.

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Research Organization:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); US Air Force Office of Scientific Research (AFOSR); National Science Foundation (NSF); Strategic Council for Higher Education; University of Kansas General Research Fund

Grant/Contract Number:: AC52-07NA27344; FA8650-19-2-9300; 2151089; FA9550-18-1-0479; FA9550-22-1-0165; ECCS 2019749; ECCS 2231026; ACI-1548562

OSTI ID:: 2280490

Report Number(s):: LLNL-JRNL-852316; 1079537

Journal Information:: APL Materials, Vol. 11, Issue 11; ISSN 2166-532X

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (42)

Iron and intrinsic deep level states in Ga ₂ O ₃ Ingebrigtsen, M. E.; Varley, J. B.; Kuznetsov, A. Yu. Applied Physics Letters, Vol. 112, Issue 4 https://doi.org/10.1063/1.5020134	journal	January 2018
Impact of proton irradiation on conductivity and deep level defects in β-Ga ₂ O ₃ Ingebrigtsen, M. E.; Kuznetsov, A. Yu.; Svensson, B. G. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054826	journal	February 2019
Electron paramagnetic resonance and theoretical study of gallium vacancy in β -Ga ₂ O ₃ Son, Nguyen Tien; Ho, Quoc Duy; Goto, Ken Applied Physics Letters, Vol. 117, Issue 3 https://doi.org/10.1063/5.0012579	journal	July 2020
Role of self-trapped holes in the photoconductive gain of β -gallium oxide Schottky diodes Armstrong, Andrew M.; Crawford, Mary H.; Jayawardena, Asanka Journal of Applied Physics, Vol. 119, Issue 10 https://doi.org/10.1063/1.4943261	journal	March 2016
Investigation of unintentional Fe incorporation in (010) β-Ga ₂ O ₃ films grown by plasma-assisted molecular beam epitaxy Mauze, Akhil; Zhang, Yuewei; Mates, Tom Applied Physics Letters, Vol. 115, Issue 5 https://doi.org/10.1063/1.5096183	journal	July 2019
A survey of acceptor dopants for β -Ga ₂ O ₃ Lyons, John L. Semiconductor Science and Technology, Vol. 33, Issue 5 https://doi.org/10.1088/1361-6641/aaba98	journal	April 2018
Charge trapping at Fe due to midgap levels in Ga2O3 Bhandari, Suman; Zvanut, M. E. Journal of Applied Physics, Vol. 129, Issue 8 https://doi.org/10.1063/5.0042622	journal	February 2021
A review of Ga ₂ O ₃ materials, processing, and devices Pearton, S. J.; Yang, Jiancheng; Cary, Patrick H. Applied Physics Reviews, Vol. 5, Issue 1 https://doi.org/10.1063/1.5006941	journal	March 2018
Front Matter: Volume 11687 Oxide-based Materials and Devices XII https://doi.org/10.1117/12.2596755	conference	April 2021
Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3 McGlone, Joe F.; Ghadi, Hemant; Cornuelle, Evan Journal of Applied Physics, Vol. 133, Issue 4 https://doi.org/10.1063/5.0121416	journal	January 2023
Low temperature electron mobility exceeding 10 ⁴ cm ² /V s in MOCVD grown β -Ga ₂ O ₃ Alema, Fikadu; Zhang, Yuewei; Osinsky, Andrei APL Materials, Vol. 7, Issue 12 https://doi.org/10.1063/1.5132954	journal	December 2019
Low 1014 cm−3 free carrier concentration in epitaxial β-Ga ₂ O ₃ grown by MOCVD Alema, Fikadu; Zhang, Yuewei; Osinsky, Andrei APL Materials, Vol. 8, Issue 2 https://doi.org/10.1063/1.5132752	journal	February 2020
SRIM – The stopping and range of ions in matter (2010) Ziegler, James F.; Ziegler, M. D.; Biersack, J. P. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 268, Issue 11-12 https://doi.org/10.1016/j.nimb.2010.02.091	journal	June 2010
A method to determine deep level profiles in highly compensated, wide band gap semiconductors Armstrong, A.; Arehart, A. R.; Ringel, S. A. Journal of Applied Physics, Vol. 97, Issue 8 https://doi.org/10.1063/1.1862321	journal	April 2005
Full bandgap defect state characterization of β -Ga ₂ O ₃ grown by metal organic chemical vapor deposition Ghadi, Hemant; McGlone, Joe F.; Jackson, Christine M. APL Materials, Vol. 8, Issue 2 https://doi.org/10.1063/1.5142313	journal	February 2020
Thermodynamic study of β-Ga2O3 growth by halide vapor phase epitaxy Nomura, Kazushiro; Goto, Ken; Togashi, Rie Journal of Crystal Growth, Vol. 405 https://doi.org/10.1016/j.jcrysgro.2014.06.051	journal	November 2014
Deep level defects throughout the bandgap of (010) β-Ga ₂ O ₃ detected by optically and thermally stimulated defect spectroscopy Zhang, Z.; Farzana, E.; Arehart, A. R. Applied Physics Letters, Vol. 108, Issue 5 https://doi.org/10.1063/1.4941429	journal	February 2016
$\beta$ -Ga ₂ O ₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz Xia, Zhanbo; Xue, Hao; Joishi, Chandan IEEE Electron Device Letters, Vol. 40, Issue 7 https://doi.org/10.1109/led.2019.2920366	journal	July 2019
Electrical properties of β -Ga ₂ O ₃ single crystals grown by the Czochralski method Irmscher, K.; Galazka, Z.; Pietsch, M. Journal of Applied Physics, Vol. 110, Issue 6 https://doi.org/10.1063/1.3642962	journal	September 2011
Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga ₂ O ₃ Tadjer, Marko J.; Lyons, John L.; Nepal, Neeraj ECS Journal of Solid State Science and Technology, Vol. 8, Issue 7 https://doi.org/10.1149/2.0341907jss	journal	January 2019
Czochralski growth and characterization of β-Ga2O3 single crystals Galazka, Z.; Uecker, R.; Irmscher, K. Crystal Research and Technology, Vol. 45, Issue 12 https://doi.org/10.1002/crat.201000341	journal	August 2010
Influence of neutron irradiation on deep levels in Ge-doped (010) β-Ga ₂ O ₃ layers grown by plasma-assisted molecular beam epitaxy Farzana, Esmat; Mauze, Akhil; Varley, Joel B. APL Materials, Vol. 7, Issue 12 https://doi.org/10.1063/1.5126463	journal	December 2019
Impact of deep level defects induced by high energy neutron radiation in β-Ga ₂ O ₃ Farzana, Esmat; Chaiken, Max F.; Blue, Thomas E. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5054606	journal	February 2019
Deep level defects in low-pressure chemical vapor deposition grown (010) β-Ga2O3 Ghadi, Hemant; McGlone, Joe F.; Cornuelle, Evan APL Materials, Vol. 10, Issue 10 https://doi.org/10.1063/5.0101829	journal	October 2022
Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors Lang, D. V. Journal of Applied Physics, Vol. 45, Issue 7 https://doi.org/10.1063/1.1663719	journal	July 1974
Optical signatures of deep level defects in Ga ₂ O ₃ Gao, Hantian; Muralidharan, Shreyas; Pronin, Nicholas Applied Physics Letters, Vol. 112, Issue 24 https://doi.org/10.1063/1.5026770	journal	June 2018
Influence of the exchange screening parameter on the performance of screened hybrid functionals Krukau, Aliaksandr V.; Vydrov, Oleg A.; Izmaylov, Artur F. The Journal of Chemical Physics, Vol. 125, Issue 22 https://doi.org/10.1063/1.2404663	journal	December 2006
Acceptor doping of β -Ga ₂ O ₃ by Mg and N ion implantations Wong, Man Hoi; Lin, Chia-Hung; Kuramata, Akito Applied Physics Letters, Vol. 113, Issue 10 https://doi.org/10.1063/1.5050040	journal	September 2018
Deep acceptors and their diffusion in Ga ₂ O ₃ Peelaers, Hartwin; Lyons, John L.; Varley, Joel B. APL Materials, Vol. 7, Issue 2 https://doi.org/10.1063/1.5063807	journal	February 2019
Si doping of β -Ga2O3 by disilane via hybrid plasma-assisted molecular beam epitaxy Wen, Zhuoqun; Khan, Kamruzzaman; Zhai, Xin Applied Physics Letters, Vol. 122, Issue 8 https://doi.org/10.1063/5.0142107	journal	February 2023
Electrical properties of bulk semi-insulating β-Ga ₂ O ₃ (Fe) Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V. Applied Physics Letters, Vol. 113, Issue 14 https://doi.org/10.1063/1.5051986	journal	October 2018
Identification of critical buffer traps in Si δ-doped β-Ga ₂ O ₃ MESFETs McGlone, Joe F.; Xia, Zhanbo; Joishi, Chandan Applied Physics Letters, Vol. 115, Issue 15 https://doi.org/10.1063/1.5118250	journal	October 2019
First-Principles Calculations of Luminescence Spectrum Line Shapes for Defects in Semiconductors: The Example of GaN and ZnO Alkauskas, Audrius; Lyons, John L.; Steiauf, Daniel Physical Review Letters, Vol. 109, Issue 26 https://doi.org/10.1103/physrevlett.109.267401	journal	December 2012
Low temperature cathodoluminescence study of Fe-doped β-Ga2O3 Hany, Ibrahim; Yang, Ge; Zhou, Chuanzhen Elaine Materials Letters, Vol. 257 https://doi.org/10.1016/j.matlet.2019.126744	journal	December 2019
Theoretical confirmation of the polaron model for the Mg acceptor in β-Ga ₂ O ₃ Ho, Quoc Duy; Frauenheim, Thomas; Deák, Peter Journal of Applied Physics, Vol. 124, Issue 14 https://doi.org/10.1063/1.5049861	journal	October 2018
Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs Chabak, Kelson D.; McCandless, Jonathan P.; Moser, Neil A. IEEE Electron Device Letters, Vol. 39, Issue 1 https://doi.org/10.1109/led.2017.2779867	journal	January 2018
Deep-ultraviolet transparent conductive β-Ga2O3 thin films Orita, Masahiro; Ohta, Hiromichi; Hirano, Masahiro Applied Physics Letters, Vol. 77, Issue 25 https://doi.org/10.1063/1.1330559	journal	December 2000
Photoionization cross-section analysis for a deep trap contributing to current collapse in GaN field-effect transistors Pässler, Roland Journal of Applied Physics, Vol. 96, Issue 1 https://doi.org/10.1063/1.1753076	journal	July 2004
Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory Seyidov, Palvan; Varley, Joel B.; Galazka, Zbigniew APL Materials, Vol. 10, Issue 11 https://doi.org/10.1063/5.0112915	journal	November 2022
Radiation Effects on β-Ga2O3 Materials and Devices Ghadi, Hemant J.; McGlone, Joe F.; Farzana, Esmat Ultrawide Bandgap β-Ga2O3 Semiconductor https://doi.org/10.1063/9780735425033_012	book	January 2023
Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga₂O₃ Ghadi, Hemant; McGlone, Joe F.; Feng, Zixuan Applied Physics Letters, Vol. 117, Issue 17 https://doi.org/10.1063/5.0025970	journal	October 2020
Carrier capture kinetics, deep levels, and isolation properties of β -Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation De Santi, C.; Fregolent, M.; Buffolo, M. Applied Physics Letters, Vol. 117, Issue 26 https://doi.org/10.1063/5.0029295	journal	December 2020

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Title: Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies

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Title: Identification and characterization of deep nitrogen acceptors in β-Ga₂O₃ using defect spectroscopies