Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

McGlone, Joe F.; Ghadi, Hemant; Cornuelle, Evan; Armstrong, Andrew; Burns, George; Feng, Zixuan; Uddin Bhuiyan, A. F. M. Anhar; Zhao, Hongping; Arehart, Aaron R.; Ringel, Steven A.

doi:10.1063/5.0121416

Title: Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃

Journal Article · Wed Jan 25 00:00:00 EST 2023 · Journal of Applied Physics

DOI:https://doi.org/10.1063/5.0121416· OSTI ID:1971636

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The Ohio State Univ., Columbus, OH (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

The impact of 1.8 MeV proton irradiation on metalorganic chemical vapor deposition grown (010) β-Ga₂O₃ Schottky diodes is presented. It is found that after a 10.8 × 10¹³ cm^–2 proton fluence the Schottky barrier height of (1.40 ± 0.05 eV) and the ideality factor of (1.05 ± 0.05 ) are unaffected. Capacitance–voltage extracted net ionized doping curves indicate a carrier removal rate of 268 ± 10 cm^–1. The defect states responsible for the observed carrier removal are studied through a combination of deep level transient and optical spectroscopies (DLTS/DLOS) as well as lighted capacitance–voltage (LCV) measurements. The dominating effect on the defect spectrum is due to the E_c-2.0 eV defect state observed in DLOS and LCV. This state accounts for ~75 % of the total trap introduction rate and is the primary source of carrier removal from proton irradiation. Of the DLTS detected states, the E_c-0.72 eV state dominated but had a comparably smaller contribution to the trap introduction. These two traps have previously been correlated with acceptor-like gallium vacancy-related defects. Several other trap states at E_C-0.36, E_C-0.63, and E_C-1.09 eV were newly detected after proton irradiation, and two pre-existing states at E_C-1.2 and E_C-4.4 eV showed a slight increase in concentration after irradiation, together accounting for the remainder of trap introduction. However, a pre-existing trap at E_c-0.40 eV was found to be insensitive to proton irradiation and, therefore, is likely of extrinsic origin. Furthermore, the comprehensive defect characterization of 1.8 MeV proton irradiation damage can aid the modeling and design for a range of radiation tolerant devices.

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Research Organization:: Georgia Institute of Technology, Atlanta, GA (United States); Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA); Department of the Defense, Defense Threat Reduction Agency; US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: NA0003921; HDTRA11710034; DGE-1343012; FA9550-22-1-0012; NA0003525; Award Number DE-NA0003921

OSTI ID:: 1971636

Alternate ID(s):: OSTI ID: 1916513; OSTI ID: 2311671

Report Number(s):: SAND-2023-00299J; TRN: US2313584

Journal Information:: Journal of Applied Physics, Vol. 133, Issue 4; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga2O3

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Title: Proton radiation effects on electronic defect states in MOCVD-grown (010) β-Ga₂O₃