Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN]

Collins, K. C.; Armstrong, Andrew M.; Allerman, Andrew A.; Vizkelethy, G.; Van Deusen, Stuart B.; Leonard, Francois; Talin, Albert Alec

doi:10.1063/1.5006814

Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial and heteroepitaxial n-GaN [Proton irradiation effects on minority carrier diffusion length and defect introduction in homoepitaxial n-GaN]

Journal Article · Wed Dec 20 23:00:00 EST 2017 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.5006814· OSTI ID:1421641

Collins, K. C. ^[1]; Armstrong, Andrew M. ^[2]; Allerman, Andrew A. ^[2]; Vizkelethy, G. ^[2]; Van Deusen, Stuart B. ^[2]; Leonard, Francois ^[1]; Talin, Albert Alec ^[1]

Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

Here, inherent advantages of wide bandgap materials make GaN-based devices attractive for power electronics and applications in radiation environments. Recent advances in the availability of wafer-scale, bulk GaN substrates have enabled the production of high quality, low defect density GaN devices, but fundamental studies of carrier transport and radiation hardness in such devices are lacking. Here, we report measurements of the hole diffusion length in low threading dislocation density (TDD), homoepitaxial n-GaN, and high TDD heteroepitaxial n-GaN Schottky diodes before and after irradiation with 2.5 MeV protons at fluences of 4–6 × 10¹³ protons/cm². We also characterize the specimens before and after irradiation using electron beam-induced-current (EBIC) imaging, cathodoluminescence, deep level optical spectroscopy (DLOS), steady-state photocapacitance, and lighted capacitance-voltage (LCV) techniques. We observe a substantial reduction in the hole diffusion length following irradiation (50%–55%) and the introduction of electrically active defects which could be attributed to gallium vacancies and associated complexes (V_Ga-related), carbon impurities (C-related), and gallium interstitials (Ga_i). EBIC imaging suggests long-range migration and clustering of radiation-induced point defects over distances of ~500 nm, which suggests mobile Ga_i. Following irradiation, DLOS and LCV reveal the introduction of a prominent optical energy level at 1.9 eV below the conduction band edge, consistent with the introduction of Ga_i.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE National Nuclear Security Administration (NNSA)

Grant/Contract Number:: AC04-94AL85000

OSTI ID:: 1421641

Alternate ID(s):: OSTI ID: 1414507
OSTI ID: 1872015

Report Number(s):: SAND--2017-13818J; 659684

Journal Information:: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 23 Vol. 122; ISSN 0021-8979

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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