Layer-engineered interlayer charge transfer in WSe2/WS2 heterostructures

Bian, Ang; Liu, Shuangyan; Zhang, Xiaoxian; Liu, Zeng; He, Dawei; Zhao, Hui; Dai, Jun

doi:10.1088/1361-6463/acba2b

Title: Layer-engineered interlayer charge transfer in WSe₂/WS₂ heterostructures

Journal Article · Wed Mar 08 00:00:00 EST 2023 · Journal of Physics. D, Applied Physics

DOI:https://doi.org/10.1088/1361-6463/acba2b· OSTI ID:2242507

^[1]; Liu, Shuangyan ^[2]; Zhang, Xiaoxian ^[3];

^[4]; He, Dawei ^[3];

^[5]; Dai, Jun ^[6]

Jiangsu University of Science and Technology, Zhenjiang (China); Beijing Jiaotong University (China)
Beijing Jiaotong University (China); Yantai University (China)
Beijing Jiaotong University (China)
Nanjing University of Posts and Telecommunications (China)
University of Kansas, Lawrence, KS (United States)
Jiangsu University of Science and Technology, Zhenjiang (China)

The layer thickness determines the electronic structure of two-dimensional (2D) materials, leading to different band alignments, which are crucial for the transition metal dichalcogenides heterostructures. Here, we investigated the heterostructure of WSe₂/WS₂ with different layer thicknesses by steady-state and transient absorption spectroscopy. We observed different ultrafast charge transfer behaviors in 1L-WSe₂/2L-WS₂ and 2L-WSe₂/2L-WS₂ few-layer heterostructures. We demonstrate that the layer thickness determines the sequence of intralayer exciton relaxation and interlayer charge transfer. The valley transfer of the band edge induced by the layer thickness can effectively mediate the hot carrier transfer time and interlayer exciton lifetime. Furthermore, these provide us a deeper understanding of carrier dynamics in 2D indirect bandgap semiconductor heterostructures.

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Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division (MSE); National Natural Science Foundation (NSFC) of China

Grant/Contract Number:: SC0020995; 11874185; 11974088

OSTI ID:: 2242507

Journal Information:: Journal of Physics. D, Applied Physics, Vol. 56, Issue 13; ISSN 0022-3727

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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