Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

Liu, Shuangyan; He, Dawei; Tan, Congwei; Fu, Shaohua; Han, Xiuxiu; Huang, Mohan; Miao, Qing; Zhang, Xiaoxian; Wang, Yongsheng; Peng, Hailin; Zhao, Hui

doi:10.1002/smll.202106078

Title: Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers

Journal Article · Fri Dec 03 00:00:00 EST 2021 · Small

DOI:https://doi.org/10.1002/smll.202106078· OSTI ID:1864712

^[1]; He, Dawei ^[1]; Tan, Congwei ^[2]; Fu, Shaohua ^[1]; Han, Xiuxiu ^[1]; Huang, Mohan ^[1]; Miao, Qing ^[1]; Zhang, Xiaoxian ^[1]; Wang, Yongsheng ^[1];

^[2];

^[3]

Beijing Jiaotong University (China)
Peking Univ., Beijing (China)
Univ. of Kansas, Lawrence, KS (United States)

Abstract Atomically thin bismuth oxyselenide (Bi ₂ O ₂ Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge‐carrier mobility and good air stability. Recently, the development of Bi ₂ O ₂ Se‐based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi ₂ O ₂ Se‐based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi ₂ O ₂ Se and representative transition metal dichalcogenides (namely, WS ₂ /Bi ₂ O ₂ Se and MoS ₂ /Bi ₂ O ₂ Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type‐II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time‐resolved and layer‐selective pump–probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long‐lived interlayer excitons. These results establish the feasibility of integrating 2D Bi ₂ O ₂ Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.

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Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: National Natural Science Foundation of China (NSFC); Beijing Natural Science Foundation of China; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; USDOE

Contributing Organization:: Beijing Jiaotong University; Peking University

Grant/Contract Number:: SC0020995; 61875236; 61905010; 61975007; Z190006; 11974088; 21733001; 21920102004

OSTI ID:: 1864712

Alternate ID(s):: OSTI ID: 1834246

Journal Information:: Small, Vol. 18, Issue 7; ISSN 1613-6810

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
band structures
Bi2O2Se
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transition metal dichalcogenides
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Title: Charge Transfer Properties of Heterostructures Formed by Bi2O2Se and Transition Metal Dichalcogenide Monolayers

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References (81)

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Title: Charge Transfer Properties of Heterostructures Formed by Bi₂O₂Se and Transition Metal Dichalcogenide Monolayers