Morphology Control of Growth by Hydride Vapor Phase Epitaxy on Faceted GaAs Substrates Produced by Controlled Spalling for Low Cost III-V Devices
Conference
·
OSTI ID:1984979
In this work, we apply the morphology control of hydride vapor phase epitaxial (HVPE) growth to planarize faceted, non-planar substrates. Controlled spalling is a promising high-throughput substrate reuse technology that could reduce substrate costs for III-V devices; however, the spalling fracture for (100)-oriented GaAs substrates produces a regularly corrugated surface of facets that are 5-20 um in height. We discuss how to planarize these surfaces using only a few minutes of HVPE growth and how to minimize the impact on throughput when integrating faceted wafers into a potential manufacturing process at scale.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office
- DOE Contract Number:
- AC36-08GO28308
- OSTI ID:
- 1984979
- Report Number(s):
- NREL/PR-5900-85452; MainId:86225; UUID:b88cd753-f2a4-415d-8c1a-dfe5fc1f43b9; MainAdminID:69726
- Resource Relation:
- Conference: Presented at the International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH), 15-18 May 2023, Orlando, Florida
- Country of Publication:
- United States
- Language:
- English
Similar Records
Design of Planarizing Growth Conditions on Unpolished and Faceted (100)-Oriented GaAs Substrates Using Hydride Vapor Phase Epitaxy
Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates
24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy
Journal Article
·
Mon Jan 23 00:00:00 EST 2023
· Crystal Growth and Design
·
OSTI ID:1984979
+2 more
Analysis of Crystalline Defects Caused by Growth on Partially Planarized Spalled (100) GaAs Substrates
Journal Article
·
Sat Apr 15 00:00:00 EDT 2023
· Crystals
·
OSTI ID:1984979
+6 more
24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy
Journal Article
·
Sun Dec 03 00:00:00 EST 2023
· Advanced Energy Materials
·
OSTI ID:1984979
+5 more