24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

Braun, Anna K.; Boyer, Jacob T.; Schulte, Kevin L.; McMahon, William E.; Simon, John; Perna, Allison N.; Packard, Corinne E.; Ptak, Aaron J.

doi:10.1002/aenm.202302035

24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

Journal Article · Sat Dec 02 23:00:00 EST 2023 · Advanced Energy Materials

DOI:https://doi.org/10.1002/aenm.202302035· OSTI ID:2280791

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Colorado School of Mines, Golden, CO (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
Colorado School of Mines, Golden, CO (United States); National Renewable Energy Laboratory (NREL), Golden, CO (United States)

A 24%-efficient single-junction GaAs solar cell grown directly on a faceted, spalled (100) GaAs substrate after in situ planarization growth by hydride vapor phase epitaxy (HVPE) is achieved. Controlled spalling, a promising low-cost substrate reuse technique, produces large facets in (100)-oriented GaAs substrates due to the orientation of the fracture planes used for lift-off. Planarization by HVPE offers a path toward direct use of these spalled substrates without costly polishing steps. In this report the growth rate anisotropy enabling planarization arising from diffusion and differences in the adsorption of growth species on {n11}B-type facets relative to (100) is determined. Consecutive planarization and device growth that results in a solar cell with a minimal performance difference relative to a control cell grown on an epitaxy-ready substrate are demonstrated. These results show that controlled spalling coupled with HVPE planarization is a viable pathway for lowering the cost of III-V photovoltaics.

View Accepted Manuscript (DOE)

Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office; Air Force Research Laboratory (AFRL); National Science Foundation (NSF)

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 2280791

Alternate ID(s):: OSTI ID: 2228362

Report Number(s):: NREL/JA-5900-86300; MainId:87073; UUID:9ca26979-4b6b-46a5-ae65-06c4d209338d; MainAdminId:71073

Journal Information:: Advanced Energy Materials, Journal Name: Advanced Energy Materials Journal Issue: 3 Vol. 14; ISSN 1614-6832

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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24% Single-Junction GaAs Solar Cell Grown Directly on Growth-Planarized Facets Using Hydride Vapor Phase Epitaxy

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