First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

Bae, Hagyoul; Park, Tae Joon; Noh, Jinhyun; Chung, Wonil; Si, Mengwei; Ramanathan, Shriram; Ye, Peide D.

doi:10.1088/1361-6528/ac3f11

Title: First demonstration of robust tri-gate β-Ga₂O₃ nano-membrane field-effect transistors

Journal Article · Fri Dec 24 00:00:00 EST 2021 · Nanotechnology

DOI:https://doi.org/10.1088/1361-6528/ac3f11· OSTI ID:1979296

^[1]; Park, Tae Joon ^[1]; Noh, Jinhyun ^[1]; Chung, Wonil ^[1]; Si, Mengwei ^[2]; Ramanathan, Shriram ^[1]; Ye, Peide D. ^[1]

Purdue University, West Lafayette, IN (United States)
Shanghai Jiao Tong University (China)

Nano-membrane tri-gate β-gallium oxide (β-Ga₂O₃) field-effect transistors (FETs) on SiO₂/Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between β-Ga₂O₃ and gate dielectric, atomic layer-deposited 15 nm thick aluminum oxide (Al₂O₃) was utilized with tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV dec^–1, high drain current (I_DS) ON/OFF ratio of 1.5 × 10⁹, and negligible transfer characteristic hysteresis. Furthermore, we also experimentally demonstrated robustness of these devices with current–voltage (I–V) characteristics measured at temperatures up to 400 °C.

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Research Organization:: Univ. of California, San Diego, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Department of the Navy, Office of Naval Research (ONR)

Grant/Contract Number:: SC0019273; N00014-15-1-2833

OSTI ID:: 1979296

Journal Information:: Nanotechnology, Vol. 33, Issue 12; ISSN 0957-4484

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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77 NANOSCIENCE AND NANOTECHNOLOGY
Materials science
physics
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β-Ga2O3 FETs
exfoliation
wide bandgap
atomic layer deposition
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multi-channel

Title: First demonstration of robust tri-gate β-Ga2O3 nano-membrane field-effect transistors

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References (29)

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Title: First demonstration of robust tri-gate β-Ga₂O₃ nano-membrane field-effect transistors