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Title: Metal-organic pulsed laser deposition for stoichiometric complex oxide thin films

Patent ·
OSTI ID:1925074

Methods and systems for forming complex oxide films are provided. Also provided are complex oxide films and heterostructures made using the methods and electronic devices incorporating the complex oxide films and heterostructures. In the methods pulsed laser deposition is conducted in an atmosphere containing a metal-organic precursor to form highly stoichiometric complex oxides.

Research Organization:
Univ. of Wisconsin, Madison, WI (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FG02-06ER46327
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI)
Patent Number(s):
11,437,234
Application Number:
16/985,455
OSTI ID:
1925074
Resource Relation:
Patent File Date: 08/05/2020
Country of Publication:
United States
Language:
English

References (1)

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain journal February 2011

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