Spectroscopic Investigation of Shallow Hole Traps in Ga- and B-doped Czochralski Silicon: Insight into Light-Induced Degradation

Meyer, Abigail R.; Abdul Fattah, Tarek O.; Taylor, P. Craig; Venuti, Michael B.; Eley, Serena; LaSalvia, Vincenzo; Nemeth, William; Page, Matthew; Young, David L.; Halsall, Matthew; Stradins, Paul; Agarwal, Sumit

doi:10.1021/acsaem.2c02852

Title: Spectroscopic Investigation of Shallow Hole Traps in Ga- and B-doped Czochralski Silicon: Insight into Light-Induced Degradation

Journal Article · Mon Nov 07 00:00:00 EST 2022 · ACS Applied Energy Materials

DOI:https://doi.org/10.1021/acsaem.2c02852· OSTI ID:1905800

^[1]; Abdul Fattah, Tarek O. ^[2]; Taylor, P. Craig ^[1]; Venuti, Michael B. ^[1]; Eley, Serena ^[1]; LaSalvia, Vincenzo ^[3]; Nemeth, William ^[4]; Page, Matthew ^[3];

^[3]; Halsall, Matthew ^[2]; Stradins, Paul ^[3];

^[1]

Colorado School of Mines, Golden, CO (United States)
University of Manchester (United Kingdom)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
National Renewable Energy Laboratory (NREL), Golden, CO (United States)s

We report the minority carrier lifetime in B-doped Czochralski (Cz) Si declines upon carrier injection due to light-induced degradation (LID), which is attributed to the formation of a recombination-active boron-oxygen complex. Ga-doped Cz Si does not undergo LID. Previously, we showed that B-doped Cz Si undergoes a transition from paramagnetic to diamagnetic due to LID. Herein, we show that Ga-doped Cz Si remains paramagnetic upon carrier injection. This suggests that either the shallow hole traps that are formed in B-doped Cz Si are absent in Ga-doped Cz Si, or the negative-U centers in Ga-doped Cz Si do not transform into a recombination-active configuration, because the shallow acceptor trap state is shallower than the Ga acceptor level in the forbidden gap. In contrast to B-doped Cz Si, the defect signatures in Ga-doped Cz Si do not change upon light exposure, as detected by both electron paramagnetic resonance and deep-level transient spectroscopy.

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Research Organization:: National Renewable Energy Laboratory (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308

OSTI ID:: 1905800

Report Number(s):: NREL/JA-5900-84812; MainId:85585; UUID:4705a4cc-1f73-450e-83c5-1341e5a42f9d; MainAdminID:68271

Journal Information:: ACS Applied Energy Materials, Vol. 5, Issue 11; ISSN 2574-0962

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (29)

Recent insights into boron-oxygen related degradation: Evidence of a single defect Hallam, Brett; Kim, Moonyong; Abbott, Malcolm Solar Energy Materials and Solar Cells, Vol. 173 https://doi.org/10.1016/j.solmat.2017.06.038	journal	December 2017
Lifetimes exceeding 1ms in 1-Ωcm boron-doped Cz-silicon Walter, D. C.; Lim, B.; Bothe, K. Solar Energy Materials and Solar Cells, Vol. 131 https://doi.org/10.1016/j.solmat.2014.06.011	journal	December 2014
Rapid mitigation of carrier-induced degradation in commercial silicon solar cells Hallam, Brett J.; Chan, Catherine E.; Chen, Ran Japanese Journal of Applied Physics, Vol. 56, Issue 8S2 https://doi.org/10.7567/JJAP.56.08MB13	journal	July 2017
Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application Glunz, S. W.; Rein, S.; Knobloch, J. Progress in Photovoltaics: Research and Applications, Vol. 7, Issue 6 https://doi.org/10.1002/(SICI)1099-159X(199911/12)7:6<463::AID-PIP293>3.0.CO;2-H	journal	November 1999
Boron–Oxygen Complex Responsible for Light‐Induced Degradation in Silicon Photovoltaic Cells: A New Insight into the Problem Markevich, Vladimir P.; Vaqueiro-Contreras, Michelle; De Guzman, Joyce T. physica status solidi (a), Vol. 216, Issue 17 https://doi.org/10.1002/pssa.201900315	journal	July 2019
Structure and transformation of the metastable boron- and oxygen-related defect center in crystalline silicon Schmidt, Jan; Bothe, Karsten Physical Review B, Vol. 69, Issue 2 https://doi.org/10.1103/PhysRevB.69.024107	journal	January 2004
Contactless determination of current–voltage characteristics and minority‐carrier lifetimes in semiconductors from quasi‐steady‐state photoconductance data Sinton, Ronald A.; Cuevas, Andres Applied Physics Letters, Vol. 69, Issue 17 https://doi.org/10.1063/1.117723	journal	October 1996
Influence of hydrogen on the regeneration of boron-oxygen related defects in crystalline silicon Wilking, S.; Herguth, A.; Hahn, G. Journal of Applied Physics, Vol. 113, Issue 19 https://doi.org/10.1063/1.4804310	journal	May 2013
19.1% efficient silicon solar cell Green, M. A.; Blakers, A. W.; Shi, Jiqun Applied Physics Letters, Vol. 44, Issue 12 https://doi.org/10.1063/1.94678	journal	June 1984
Acceptor-oxygen defects in silicon: The electronic properties of centers formed by boron, gallium, indium, and aluminum interactions with the oxygen dimer de Guzman, Joyce Ann T.; Markevich, Vladimir P.; Hawkins, Ian D. Journal of Applied Physics, Vol. 130, Issue 24 https://doi.org/10.1063/5.0076980	journal	December 2021
The path to 25% silicon solar cell efficiency: History of silicon cell evolution Green, Martin A. Progress in Photovoltaics: Research and Applications, Vol. 17, Issue 3 https://doi.org/10.1002/pip.892	journal	May 2009
Effect of illumination conditions on Czochralski-grown silicon solar cell degradation Hashigami, Hiroshi; Itakura, Yu; Saitoh, Tadashi Journal of Applied Physics, Vol. 93, Issue 7 https://doi.org/10.1063/1.1559430	journal	April 2003
Impact of hydrogen on the permanent deactivation of the boron-oxygen-related recombination center in crystalline silicon Walter, Dominic C.; Schmidt, Jan Solar Energy Materials and Solar Cells, Vol. 158 https://doi.org/10.1016/j.solmat.2016.05.025	journal	December 2016
System performance loss due to LeTID Kersten, Friederike; Fertig, Fabian; Petter, Kai Energy Procedia, Vol. 124 https://doi.org/10.1016/j.egypro.2017.09.260	journal	September 2017
Electronically activated boron-oxygen-related recombination centers in crystalline silicon Bothe, Karsten; Schmidt, Jan Journal of Applied Physics, Vol. 99, Issue 1 https://doi.org/10.1063/1.2140584	journal	January 2006
Lifetime instabilities in gallium doped monocrystalline PERC silicon solar cells Grant, Nicholas E.; Scowcroft, Jennifer R.; Pointon, Alex I. Solar Energy Materials and Solar Cells, Vol. 206 https://doi.org/10.1016/j.solmat.2019.110299	journal	March 2020
Chemical Passivation of Crystalline Si by Al₂O₃ Deposited Using Atomic Layer Deposition: Implications for Solar Cells Meyer, Abigail R.; Chaukulkar, Rohan P.; Leick, Noemi ACS Applied Nano Materials, Vol. 4, Issue 7 https://doi.org/10.1021/acsanm.1c00448	journal	June 2021
Light-induced Lifetime Degradation in Boron-doped Czochralski Silicon: Are Oxygen Dimers Involved? Voronkov, Vladimir V.; Falster, Robert; Bothe, Karsten Energy Procedia, Vol. 38 https://doi.org/10.1016/j.egypro.2013.07.327	journal	January 2013
Understanding the light-induced degradation at elevated temperatures: Similarities between multicrystalline and floatzone p-type silicon Niewelt, Tim; Schindler, Florian; Kwapil, Wolfram Progress in Photovoltaics: Research and Applications, Vol. 26, Issue 8 https://doi.org/10.1002/pip.2954	journal	November 2017
Atomic structure of light-induced efficiency-degrading defects in boron-doped Czochralski silicon solar cells Meyer, Abigail R.; Taylor, P. Craig; Venuti, Michael B. Energy & Environmental Science, Vol. 14, Issue 10 https://doi.org/10.1039/D1EE01788H	journal	January 2021
Isotope Effects in ESR Spectroscopy Stößer, Reinhard; Herrmann, Werner Molecules, Vol. 18, Issue 6 https://doi.org/10.3390/molecules18066679	journal	June 2013
ESR from boron in silicon at zero and small external stress. II. Linewidth and crystal defects Neubrand, H. Physica Status Solidi (b), Vol. 90, Issue 1 https://doi.org/10.1002/pssb.2220900133	journal	November 1978
A New Approach to Prevent the Negative Impact of the Metastable Defect in Boron Doped CZ Silicon Solar Cells Herguth, Axel; Schubert, Gunnar; Kaes, Martin 2006 IEEE 4th World Conference on Photovoltaic Energy Conference https://doi.org/10.1109/WCPEC.2006.279611	conference	January 2006
Influence of Tabula Rasa on Process- and Light-Induced Degradation of Solar Cells Fabricated From Czochralski Silicon Meyer, Abigail R.; LaSalvia, Vincenzo; Nemeth, William IEEE Journal of Photovoltaics, Vol. 10, Issue 6 https://doi.org/10.1109/JPHOTOV.2020.3020214	journal	November 2020
Pulsed electrically detected magnetic resonance for thin film silicon and organic solar cells Schnegg, Alexander; Behrends, Jan; Fehr, Matthias Physical Chemistry Chemical Physics, Vol. 14, Issue 42 https://doi.org/10.1039/c2cp41258f	journal	January 2012
Quasi-steady-state photoconductance, a new method for solar cell material and device characterization Sinton, R. A.; Cuevas, A.; Stuckings, M. Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996 https://doi.org/10.1109/PVSC.1996.564042	conference	January 1996
Magnetic Properties ofN-Type Silicon Sonder, E.; Stevens, D. K. Physical Review, Vol. 110, Issue 5 https://doi.org/10.1103/PhysRev.110.1027	journal	June 1958
Studying Light-Induced Degradation by Lifetime Decay Analysis: Excellent Fit to Solution of Simple Second-Order Rate Equation Naerland, Tine Uberg; Haug, Halvard; Angelskar, Hallvard IEEE Journal of Photovoltaics, Vol. 3, Issue 4 https://doi.org/10.1109/JPHOTOV.2013.2278663	journal	October 2013
ESR From boron in silicon at zero and small external stress I. Line positions and line structure Neubrand, H. Physica Status Solidi (b), Vol. 86, Issue 1 https://doi.org/10.1002/pssb.2220860131	journal	March 1978

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