Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

Brewer, A.; Lindemann, Shane; Wang, Bo; Maeng, W.; Frederick, J.; Li, Fei; Choi, Yongseong; Thompson, P. J.; Kim, Jong -Woo; Mooney, T.; Vaithyanathan, V.; Schlom, Darrell G.; Rzchowski, M. S.; Chen, L. Q.; Ryan, Philip J.; Eom, Chang -Beom

doi:10.1063/5.0068581

Title: Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

Journal Article · Thu Nov 18 00:00:00 EST 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0068581· OSTI ID:1897903

Brewer, A. ^[1];

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^[2]; Maeng, W. ^[1]; Frederick, J. ^[1];

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^[4]; Mooney, T. ^[4]; Vaithyanathan, V. ^[6];

^[7]; Rzchowski, M. S. ^[1]; Chen, L. Q. ^[2];

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Univ. of Wisconsin, Madison, WI (United States)
Pennsylvania State Univ., University Park, PA (United States)
Xi'an Jiaotong Univ., Shaanxi (China)
Argonne National Lab. (ANL), Argonne, IL (United States)
Univ. of Liverpool (United Kingdom)
Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853, USA
Cornell Univ., Ithaca, NY (United States); Leibniz Inst. for Crystal Growth (IKZ), Berlin (Germany)
Argonne National Lab. (ANL), Argonne, IL (United States); Dublin City University (Ireland)

Bulk single-crystal relaxor-ferroelectrics, like Pb(Mg_1/3Nb_2/3)O-₃-PbTiO₃ (PMN-PT), are widely known for their large piezoelectricity. This is attributed to polarization rotation, which is facilitated by the presence of various crystal symmetries for compositions near a morphotropic phase boundary. Relaxor-ferroelectric thin films, which are necessary for low-voltage applications, suffer a reduction in their piezoelectric response due to clamping by the passive substrate. To understand the microscopic behavior of this adverse phenomenon, we employ the AC electric field driven in-operando synchrotron x-ray diffraction on patterned device structures to investigate the piezoelectric domain behavior under an electric field for both a clamped (001) PMN-PT thin film on Si and a (001) PMN-PT membrane released from its substrate. In the clamped film, the substrate inhibits the field-induced rhombohedral (R) to tetragonal (T) phase transition resulting in a reversible R to Monoclinic (M) transition with a reduced longitudinal piezoelectric coefficient d₃₃ < 100 pm/V. Releasing the film from the substrate results in recovery of the R to T transition and results in a d₃₃ > 1000 pm/V. Here, using diffraction with spatial mapping, we find that lateral constraints imposed by the boundary between the active and inactive materials also inhibit the R to T transition. Phase-field calculations on both clamped and released PMN-PT thin films simulate our experimental findings. Resolving the suppression of thin film piezoelectric response is critical to their application in piezo-driven technologies.

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Research Organization:: Argonne National Laboratory (ANL), Argonne, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army Research Office (ARO); Gordon and Betty Moore Foundation; US Air Force Office of Scientific Research (AFOSR); National Science Fund (NSF); Samsung Electronics Company

Grant/Contract Number:: AC02-06CH11357; W911NF-17-1-0462; GBMF9065; FA9550-15-1-0334; DMR-1720415; FG02-06ER46327; DGE-1256259; GBMF9073

OSTI ID:: 1897903

Alternate ID(s):: OSTI ID: 1831306

Journal Information:: Applied Physics Letters, Vol. 119, Issue 20; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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36 MATERIALS SCIENCE
piezoelectric materials
thin films
synchrotron x-ray diffraction
heterostructures
electric fields
ferroelectric materials
phase transitions

Title: Microscopic piezoelectric behavior of clamped and membrane (001) PMN-30PT thin films

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