SrTiO3 on piezoelectric PMN-PT(001) for application of variable strain
- IFW Dresden
- Technische Universitat Dresden
- TU Dresden
- Institut fur Metallische Werkstoffe, Dresden, Germany
- ORNL
SrTiO3 (STO) is the most frequently used substrate material for complex oxide films. In this work, STO is explored as a buffer layer on piezoelectric pseudocubic Pb(Mg1/3Nb2/3)0.72Ti0.28O3(001) (PMN-PT) substrates which serve to reversibly strain thin films. The STO buffer layer reduces the in-plane lattice parameter and allows for better lattice matching to broader range of thin film materials. STO films (30 nm) have been grown with epitaxial orientation on PMN-PT with an in-plane lattice parameter close to that of bulk STO. The substrate`s rhombohedral domain structure has been imaged by Atomic Force Microscopy (AFM). The related ferroelectric domain structure has been investigated by Piezoresponse Force Microscopy (PFM). Within a domain, STO grows with rather low roughness (rms < 0.2 nm). The transfer of the piezoelectric substrate strain to the STO film and its variation with an applied electric field is studied by x-ray diffraction. The strain dependence of the electrical resistance is measured for a ferromagnetic manganite film grown on top of the STO. Both experiments confirm qualitatively that the STO buffer transfers the substrate strain into a functional film deposited on top.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Sciences (CNMS)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- DE-AC05-00OR22725
- OSTI ID:
- 941049
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 5; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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