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Title: Method for fabricating embedded nanostructures with arbitrary shape

Patent ·
OSTI ID:1892532
; ; ;

A layered heterostructure, comprising alternating layers of different semiconductors, wherein one of the atom species of one of the semiconductors has a faster diffusion rate along an oxidizing interface than an atom species of the other semiconductor at an oxidizing temperature, can be used to fabricate embedded nanostructures with arbitrary shape. The result of the oxidation will be an embedded nanostructure comprising the semiconductor having slower diffusing atom species surrounded by the semiconductor having the higher diffusing atom species. The method enables the fabrication of low- and multi-dimensional quantum-scale embedded nanostructures, such as quantum dots (QDs), toroids, and ellipsoids.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Univ. of Florida, Gainesville, FL (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
NA0003525
Assignee:
National Technology & Engineering Solutions of Sandia, LLC (Albuquerque, NM); University of Florida Research Foundation, Inc. (Gainesville, FL)
Patent Number(s):
11,222,950
Application Number:
16/852,763
OSTI ID:
1892532
Resource Relation:
Patent File Date: 04/20/2020
Country of Publication:
United States
Language:
English

References (15)

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Oxidation of silicon–germanium alloys. II. A mathematical model journal December 1997
Surround-gated vertical nanowire quantum dots journal June 2010
Metal assisted chemical etching to produce III-V semiconductor nanostructures patent February 2015
Lateral Ge Diffusion During Oxidation of Si/SiGe Fins journal March 2017
Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator patent May 2012
Surface brightens up Si quantum dots: direct bandgap-like size-tunable emission journal January 2013
Apparatus and methods of nanopatterning and applications of same patent-application August 2011
Encapsulated nanostructures and devices containing encapsulated nanostructures patent September 2019
Method of manufacturing MOS transistor with stack of cascaded nanowires patent September 2018
Encapsulated nanostructures and method for fabricating patent May 2018
Semiconductor nanowire and its manufacturing method patent March 2012
Precision synthesis of quantum dot nanostructures for fluorescent and optoelectronic devices patent July 2010

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