Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique

Bhattacharjee, Nirjhar; Mahalingam, Krishnamurthy; Fedorko, Adrian; Lauter, Valeria; Matzelle, Matthew; Singh, Bahadur; Grutter, Alexander; Will‐Cole, Alexandria; Page, Michael; McConney, Michael; Markiewicz, Robert; Bansil, Arun; Heiman, Don; Sun, Nian Xiang

doi:10.1002/adma.202108790

Title: Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique

Journal Article · Tue Feb 08 00:00:00 EST 2022 · Advanced Materials

DOI:https://doi.org/10.1002/adma.202108790· OSTI ID:1883675

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^[1]; Page, Michael ^[2];

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Northeastern University, Boston, MA (United States)
Air Force Research Lab. (AFRL), Wright-Patterson AFB, OH (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Tata Institute of Fundamental Research, Mumbai (India)
National Inst. of Standards and Technology (NIST), Gaithersburg, MD (United States)

Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure—Bi₂Te₃/Ni₈₀Fe₂₀ because of diffusion of Ni in Bi₂Te₃ (Ni-Bi₂Te₃). The AFM property of the Ni-Bi2Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi2Te3 layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni=Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi₂Te₄ in the Ni-Bi₂Te₃ interface layer. The Neél temperature of the Ni-Bi₂Te₃ layer is ≈ 63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.

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Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); US Army; National Institutes of Health (NIH); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); Air Force Research Laboratory (AFRL)

Grant/Contract Number:: AC05-00OR22725; W911NF20P0009; UF1NS107694; 1160504; DMR-1905662; FA9550-20-1-0247; SC0019275; FG02-07ER46352; AC02-05CH11231; FA8650-19-F-5403 TO3; FA8650-18-2-5295

OSTI ID:: 1883675

Journal Information:: Advanced Materials, Vol. 34, Issue 15; ISSN 0935-9648

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique

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