Scaling Properties in Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

Ho, Xinning; Ye, Lina; Rotkin, Slava V.; Cao, Qing; Unarunotai, Sakulsuk; Salamat, Shuaib; Alam, Muhammad A.; Rogers, John A.

doi:10.1021/nl903281v

Title: Scaling Properties in Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

Journal Article · Tue Jan 05 00:00:00 EST 2010 · Nano Letters

DOI:https://doi.org/10.1021/nl903281v· OSTI ID:1876179

Ho, Xinning ^[1]; Ye, Lina ^[1]; Rotkin, Slava V. ^[2]; Cao, Qing ^[1]; Unarunotai, Sakulsuk ^[1]; Salamat, Shuaib ^[3]; Alam, Muhammad A. ^[3]; Rogers, John A. ^[1]

Univ. of Illinois at Urbana-Champaign, IL (United States)
Lehigh Univ., Bethlehem, PA (United States)
Purdue Univ., West Lafayette, IN (United States)

Recent studies and device demonstrations indicate that horizontally aligned arrays of linearly configured single-walled carbon nanotubes (SWNTs) can serve as an effective thin film semiconductor material, suitable for scalable use in high-performance transistors. This paper presents the results of systematic investigations of the dependence of device properties on channel length, to reveal the role of channel and contact resistance in the operation. Here, the results indicate that, for the range of channel lengths and SWNT diameters studied here, source and drain contacts of Pd yield transistors with effectively Ohmic contacts that exhibit negligible dependence of their resistances on gate voltage. For devices that use Au, modulation of the resistance of the contacts represents a significant contribution to the response. Extracted values of the mobilities of the semiconducting SWNTs and the contact resistances associated with metallic and semiconducting SWNTs are consistent with previous reports on single tube test structures.

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Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46471; FG02-07ER46453

OSTI ID:: 1876179

Journal Information:: Nano Letters, Vol. 10, Issue 2; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes Ho, Xinning; Ye, Lina; Rotkin, Slava V. Nano Research, Vol. 3, Issue 6 https://doi.org/10.1007/s12274-010-0004-x	journal	May 2010
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