High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

Kocabas, Coskun; Dunham, Simon; Cao, Qing; Cimino, Kurt; Ho, Xinning; Kim, Hoon-Sik; Dawson, Dale; Payne, Joseph; Stuenkel, Mark; Zhang, Hong; Banks, Tony; Feng, Milton; Rotkin, Slava V.; Rogers, John A.

doi:10.1021/nl9001074

High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes

Journal Article · Wed Apr 08 00:00:00 EDT 2009 · Nano Letters

DOI:https://doi.org/10.1021/nl9001074· OSTI ID:1875464

Kocabas, Coskun ^[1]; Dunham, Simon ^[2]; Cao, Qing ^[2]; Cimino, Kurt ^[2]; Ho, Xinning ^[2]; Kim, Hoon-Sik ^[2]; Dawson, Dale ^[2]; Payne, Joseph ^[2]; Stuenkel, Mark ^[2]; Zhang, Hong ^[2]; Banks, Tony ^[2]; Feng, Milton ^[2]; Rotkin, Slava V. ^[2]; Rogers, John A. ^[2]

Univ. of Illinois at Urbana-Champaign, IL (United States); Northrop Grumman Electronics Systems, Linthicum, MD (United States); Lehigh Univ., Bethlehem, PA (United States); University of Illinois
Univ. of Illinois at Urbana-Champaign, IL (United States); Northrop Grumman Electronics Systems, Linthicum, MD (United States); Lehigh Univ., Bethlehem, PA (United States)

The unique electronic properties of single-walled carbon nanotubes (SWNTs) make them promising candidates for next generation electronics, particularly in systems that demand high frequency (e.g., radio frequency, RF) operation. Transistors that incorporate perfectly aligned, parallel arrays of SWNTs avoid the practical limitations of devices that use individual tubes, and they also enable comprehensive experimental and theoretical evaluation of the intrinsic properties. Thus, devices consisting of arrays represent a practical route to use of SWNTs for RF devices and circuits. The results presented here reveal many aspects of device operation in such array layouts, including full compatibility with conventional small signal models of RF response. Submicrometer channel length devices show unity current gain (f_t) and unity power gain frequencies (f_max) as high as ~5 and ~9 GHz, respectively, with measured scattering parameters (S-parameters) that agree quantitatively with calculation. The small signal models of the devices provide the essential intrinsic parameters: saturation velocities of 1.2 × 10⁷ cm/s and intrinsic values of f_t of ~30 GHz for a gate length of 700 nm, increasing with decreasing length. Here, the results provide clear insights into the challenges and opportunities of SWNT arrays for applications in RF electronics.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Illinois at Urbana-Champaign, IL (United States)

Sponsoring Organization:: National Science Foundation; USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: FG02-07ER46453; FG02-07ER46471

OSTI ID:: 1875464

Journal Information:: Nano Letters, Journal Name: Nano Letters Journal Issue: 5 Vol. 9; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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