Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes

Journal Article · · Nano Research
 [1];  [2];  [3];  [4];  [4];  [4];  [5];  [4]
  1. Univ. of Illinois at Urbana-Champaign, IL (United States); University of Illinois
  2. Univ. of Illinois at Urbana-Champaign, IL (United States); Univ. of Science and Technology of China, Hefei (China)
  3. Lehigh Univ., Bethlehem, PA (United States)
  4. Univ. of Illinois at Urbana-Champaign, IL (United States)
  5. Argonne National Lab. (ANL), Argonne, IL (United States)
We present theoretical and experimental studies of Schottky diodes that use aligned arrays of single-walled carbon nanotubes. A simple physical model, taking into account the basic physics of current rectification, can adequately describe the single-tube and array devices. We show that for as-grown array diodes, the rectification ratio, defined by the maximum-to-minimum-current-ratio, is low due to the presence of metallic-single-walled nanotube (SWNT) shunts. These tubes can be eliminated in a single voltage sweep resulting in a high rectification array device. Further analysis also shows that the channel resistance, and not the intrinsic nanotube diode properties, limits the rectification in devices with channel length up to 10 μm.
Research Organization:
Univ. of Illinois at Urbana-Champaign, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division
Grant/Contract Number:
FG02-07ER46453; FG02-07ER46471
OSTI ID:
1876433
Journal Information:
Nano Research, Journal Name: Nano Research Journal Issue: 6 Vol. 3; ISSN 1998-0124
Publisher:
SpringerCopyright Statement
Country of Publication:
United States
Language:
English

References (32)

The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors journal July 1949
Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter journal February 1942
Carbon Nanotube Schottky Diodes Using Ti−Schottky and Pt−Ohmic Contacts for High Frequency Applications journal May 2005
Scaling Properties in Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes journal January 2010
Performance and Photovoltaic Response of Polymer-Doped Carbon Nanotube p−n Diodes journal September 2008
Ballistic carbon nanotube field-effect transistors journal August 2003
n-type carbon nanotube field-effect transistors fabricated by using Ca contact electrodes journal January 2005
Transport in carbon nanotube p-i-n diodes journal October 2006
Microwave rectification by a carbon nanotube Schottky diode journal July 2008
Radio frequency analog electronics based on carbon nanotube transistors journal January 2008
Relation between conduction property and work function of contact metal in carbon nanotube field-effect transistors journal June 2006
Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes journal June 2000
Quantitative Analysis of Current-Voltage Characteristics of Semiconducting Nanowires: Decoupling of Contact Effects journal August 2007
A Doping-Free Carbon Nanotube CMOS Inverter-Based Bipolar Diode and Ambipolar Transistor journal September 2008
Vereinfachte und erweiterte Theorie der Randschicht-gleichrichter journal February 1942
Spatially Selective Guided Growth of High-Coverage Arrays and Random Networks of Single-Walled Carbon Nanotubes and Their Integration into Electronic Devices journal April 2006
Photovoltaic Effects in Asymmetrically Contacted CNT Barrier-Free Bipolar Diode journal April 2009
Carbon Nanotube Field-Effect Transistors with Integrated Ohmic Contacts and High-κ Gate Dielectrics journal March 2004
High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes journal May 2009
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices journal January 2001
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes journal March 2007
Exact analytical solution for current flow through diode with series resistance journal January 2000
Carbon nanotube p-n junction diodes journal July 2004
Photovoltaic effect in ideal carbon nanotube diodes journal August 2005
Electrical contacts to carbon nanotubes down to 1nm in diameter journal October 2005
A 500 MHz carbon nanotube transistor oscillator journal September 2008
Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes journal June 2000
Electrical Nanoprobing of Semiconducting Carbon Nanotubes Using an Atomic Force Microscope journal January 2004
Band Structure, Phonon Scattering, and the Performance Limit of Single-Walled Carbon Nanotube Transistors journal September 2005
Conductance Asymmetry of Graphene p-n Junction journal June 2009
Quantitative Experimental Analysis of Schottky Barriers and Poole–Frenkel Emission in Carbon Nanotube Devices journal May 2009
Modulated Chemical Doping of Individual Carbon Nanotubes journal November 2000

Cited By (1)

One-dimensional van der Waals heterojunction diode text January 2020

Similar Records

Scaling Properties in Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes
Journal Article · Mon Jan 04 19:00:00 EST 2010 · Nano Letters · OSTI ID:1876179

High-Frequency Performance of Submicrometer Transistors That Use Aligned Arrays of Single-Walled Carbon Nanotubes
Journal Article · Tue Apr 07 20:00:00 EDT 2009 · Nano Letters · OSTI ID:1875464

Monolithic Integration of Arrays of Single-Walled Carbon Nanotubes and Sheets of Graphene
Journal Article · Thu Jul 21 20:00:00 EDT 2011 · Advanced Materials · OSTI ID:1875678