Large-Area (Ag,Cu)(In,Ga)Se2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap

Bothwell, Alexandra M.; Li, Siming; Farshchi, Rouin; Miller, Michael F.; Wands, Jake; Perkins, Craig L.; Rockett, Angus; Arehart, Aaron R.; Kuciauskas, Darius

doi:10.1002/solr.202200230

Title: Large-Area (Ag,Cu)(In,Ga)Se₂ Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap

Journal Article · Wed Apr 27 00:00:00 EDT 2022 · Solar RRL

DOI:https://doi.org/10.1002/solr.202200230· OSTI ID:1869796

^[1]; Li, Siming ^[1]; Farshchi, Rouin ^[2]; Miller, Michael F. ^[3]; Wands, Jake ^[4]; Perkins, Craig L. ^[1]; Rockett, Angus ^[5]; Arehart, Aaron R. ^[3];

^[1]

National Renewable Energy Lab. (NREL), Golden, CO (United States)
MiaSolé Hi-Tech Corp., Santa Clara, CA (United States)
The Ohio State Univ., Columbus, OH (United States)
Colorado School of Mines, Golden, CO (United States)
Colorado School of Mines Golden CO 80401 USA

The 1.24 eV bandgap, 18.8% power conversion efficiency Ag-alloyed chalcopyrite (Ag,Cu)(In,Ga)Se₂ (ACIGS) solar cells are characterized to relate voltage and efficiency improvements to electro-optical (EO) characteristics. Shockley-Read-Hall recombination center defect density, identified and characterized through deep level transient spectroscopy and time-resolved photoluminescence (TRPL), is reduced through potassium and copper treatment optimization. Concomitantly, longer minority carrier lifetimes are achieved, which increases open-circuit voltage (V_OC). Near-conduction band defects associated in earlier studies with light-induced current instability are also mitigated. Analysis of charge-carrier dynamics after single- and two-photon excitation is used to separate recombination at the front interface and in the absorber bulk. From TRPL decay simulations, the authors estimate ranges of key solar cell material characteristics: bulk carrier lifetime T_bulk = 110-210 ns, charge-carrier mobility u = 110-160 cm² V^-1 s^-1, and front interface recombination velocity S_front = 700-1050 cm s^-1. This lowest-reported S_front for ACIGS absorbers originates from the notched conduction band grading, which also makes the impact of the back interface recombination negligible. It is suggested in the results that solar cell performance enhancements can be made most readily with two distinct strategies: improving device architecture and reducing semiconductor defect densities. Using these approaches, power conversion efficiency in large-area solar cells is improved by 1.1% absolute.

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Research Organization:: National Renewable Energy Lab. (NREL), Golden, CO (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC36-08GO28308; EE0008755

OSTI ID:: 1869796

Report Number(s):: NREL/JA-5900-82727; MainId:83500; UUID:660a31f3-4837-461f-9304-a75e5d81ce5d; MainAdminID:64571

Journal Information:: Solar RRL, Vol. 6, Issue 8; ISSN 2367-198X

Publisher:: WileyCopyright Statement

Country of Publication:: United States

Language:: English

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Title: Large-Area (Ag,Cu)(In,Ga)Se2 Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap

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Title: Large-Area (Ag,Cu)(In,Ga)Se₂ Thin-Film Solar Cells with Increased Bandgap and Reduced Voltage Losses Realized with Bulk Defect Reduction and Front-Grading of the Absorber Bandgap