Strong Coupling in Semiconductor Hyperbolic Metamaterials

Sohr, Patrick; Wei, Dongxia; Wang, Zhengtianye; Law, Stephanie

doi:10.1021/acs.nanolett.1c03290

Title: Strong Coupling in Semiconductor Hyperbolic Metamaterials

Journal Article · Wed Nov 17 00:00:00 EST 2021 · Nano Letters

DOI:https://doi.org/10.1021/acs.nanolett.1c03290· OSTI ID:1838195

Sohr, Patrick ^[1];

^[1]; Wang, Zhengtianye ^[1];

^[1]

Univ. of Delaware, Newark, DE (United States)

Semiconductor-based layered hyperbolic metamaterials (HMMs) house high-wavevector volume plasmon polariton (VPP) modes in the infrared spectral range. VPP modes have successfully been exploited in the weak-coupling regime through the enhanced Purcell effect. In this paper, we experimentally demonstrate strong coupling between the VPP modes in a semiconductor HMM and the intersubband transition of epitaxially embedded quantum wells. We observe clear anticrossings in the dispersion curves for the zeroth-, first-, second-, and third-order VPP modes, resulting in upper and lower polariton branches for each mode. This demonstration sets the stage for the creation of novel infrared optoelectronic structures combining HMMs with embedded epitaxial emitter or detector structures.

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Research Organization:: Univ. of Delaware, Newark, DE (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0017801

OSTI ID:: 1838195

Journal Information:: Nano Letters, Vol. 21, Issue 23; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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