Total-Ionizing-Dose Effects on Long-term Data Retention Characteristics of Commercial 3-D NAND Memories
- Univ. of Alabama, Huntsville, AL (United States)
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
This article evaluates the data retention characteristics of irradiated multi-level cell (MLC) 3-D NAND flash memories. We irradiate the memory chips by a Co-60 gamma-ray source for up to 50 krad(Si) and then write a random data pattern on the irradiated chip to find its retention characteristics. The experimental results show that the data retention property of the irradiated chips is significantly degraded compared to the un-irradiated ones. We evaluate two independent strategies to improve the data retention characteristics of the irradiated chips. Furthermore, the first method involves high-temperature annealing of the irradiated chip while the second method suggests pre-programming the memory modules before deploying them in radiation-prone environments.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA)
- Grant/Contract Number:
- NA0003525
- OSTI ID:
- 1834106
- Report Number(s):
- SAND-2021-13819J; 701926; TRN: US2300123
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 69, Issue 3; ISSN 0018-9499
- Publisher:
- IEEECopyright Statement
- Country of Publication:
- United States
- Language:
- English
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