New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

Buddhanoy, Matchima; Sakib, Sadman; Surendranathan, Umeshwarnath; Wasiolek, Maryla; Hattar, Khalid; Milenkovic, Aleksandar; Ray, Biswajit

doi:10.1109/tdmr.2022.3189673

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

Journal Article · Mon Jul 11 00:00:00 EDT 2022 · IEEE Transactions on Device and Materials Reliability

DOI:https://doi.org/10.1109/tdmr.2022.3189673· OSTI ID:1882604

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Univ. of Alabama, Huntsville, AL (United States)
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

This paper describes a new non-charge-based data storing technique in NAND flash memory called watermark that encodes read-only data in the form of physical properties of flash memory cells. Unlike traditional charge-based data storing method in flash memory, the proposed technique is resistant to total ionizing dose (TID) effects. To evaluate its resistance to irradiation effects, we analyze data stored in several commercial single-level-cell (SLC) flash memory chips from different vendors and technology nodes. These chips are irradiated using a Co-60 gamma-ray source array for up to 100 krad(Si) at Sandia National Laboratories. Experimental evaluation performed on a flash chip from Samsung shows that the intrinsic bit error rate (BER) of watermark increases from 0.8% for TID = 0 krad(Si) to 1% for TID = 100 krad(Si). Conversely, the BER of charge-based data stored on the same chip increases from 0% at TID = 0 krad(Si) to 1.5% at TID = 100 krad(Si). Overall, the results imply that the proposed technique may potentially offer significant improvements in data integrity relative to traditional charge-based data storage for very high radiation (TID > 100 krad(Si)) environments. These gains in data integrity relative to the charge-based data storage are useful in radiation-prone environments, but they come at the cost of increased write times and higher BERs before irradiation.

View Accepted Manuscript (DOE)

Research Organization:: Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

Sponsoring Organization:: USDOE Office of Nuclear Energy (NE); USDOE National Nuclear Security Administration (NNSA); National Science Foundation (NSF)

Grant/Contract Number:: NA0003525

OSTI ID:: 1882604

Report Number(s):: SAND2022-9936J; 708477

Journal Information:: IEEE Transactions on Device and Materials Reliability, Journal Name: IEEE Transactions on Device and Materials Reliability Journal Issue: 3 Vol. 22; ISSN 1530-4388

Publisher:: IEEECopyright Statement

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
NAND flash
bit error rate
flash memory cells
ionizing radiation
memory reliability
nonvolatile memory
resistance
single-level cell (SLC)
standards
total-ionizing-dose
watermark
watermarking

New Total-Ionizing-Dose Resistant Data Storing Technique for NAND Flash Memory

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