Zinc–hydrogen and zinc–iridium pairs in β-Ga2O3
- Washington State Univ., Pullman, WA (United States)
Zinc-doped monoclinic gallium oxide (β-Ga2O3:Zn) has semi-insulating properties that could make it a preferred material as a substrate for power devices. In this work, infrared and UV/Visible spectroscopy were used to investigate the defect properties of bulk β-Ga2O3:Zn crystals. As-grown crystals contain a single O-H stretching mode at 3486.7 cm-1 due to a neutral ZnH complex. A deuterium-annealed sample displays the corresponding O-D stretching mode at 2582.9 cm-1, confirming the O-H assignment. A strong Ir4+ electronic transition at 5147.6 cm-1 is also observed, along with sidebands attributed to ZnIr pairs. These sidebands show distinct differences compared with Mg-doped samples; most importantly, several peaks are attributed to Ir4+ paired with a Zn on the tetrahedral Ga(I) site. Annealing under an oxygen atmosphere produced insulating material with a resistance above 1 TΩ.
- Research Organization:
- Washington State Univ., Pullman, WA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR)
- Grant/Contract Number:
- FG02-07ER46386; FA9550-18-1-0507
- OSTI ID:
- 1829317
- Journal Information:
- Applied Physics Letters, Vol. 119, Issue 10; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)Copyright Statement
- Country of Publication:
- United States
- Language:
- English
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