skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hydrogen passivation of calcium and magnesium doped β-Ga2O3

Journal Article · · Proceedings of SPIE - The International Society for Optical Engineering
DOI:https://doi.org/10.1117/12.2507187· OSTI ID:1601471

Calcium and magnesium doped beta-phase gallium oxide (β-Ga2O3) single crystals were Czochralski grown in an iridium crucible and subsequently annealed in hydrogen at ~800° C. IR spectroscopy was used to investigate the roles of Mg and Ca dopants as well as H and Ir impurities. An IR peak at 3492 cm-1 was previously assigned to an O-H bond-stretching mode of a MgH complex in hydrogen-annealed Ga2O3:Mg and an IR peak at 3541 cm-1 is tentatively assigned to a similar mode in a CaH complex for H annealed Ga2O3:Ca. An IR peak at 5148 cm-1 is attributed to the presence of Ir4+ when magnesium is present. Excitation with several different wavelengths used to confirm the position of the Ir level within the band gap. Our results suggest that isolated substitutional Ca dopants are less effective as deep acceptors than Mg. Polarization dependence of the iridium IR spectra is also discussed.

Research Organization:
Washington State Univ., Pullman, WA (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division
Grant/Contract Number:
FG02-07ER46386
OSTI ID:
1601471
Journal Information:
Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10919; Conference: SPIE OPTO, San Francisco, CA (United States), 2-7 Feb 2019; ISSN 0277-786X
Publisher:
SPIECopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 5 works
Citation information provided by
Web of Science

References (16)

Device-Quality $\beta$-Ga$_{2}$O$_{3}$ Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy journal February 2012
Development of gallium oxide power devices: Development of gallium oxide power devices journal November 2013
Perspective: Ga 2 O 3 for ultra-high power rectifiers and MOSFETS journal December 2018
Anisotropy of electrical and optical properties in β-Ga2O3 single crystals journal August 1997
Crystal Structure of β‐Ga 2 O 3 journal September 1960
Electrical properties of β -Ga 2 O 3 single crystals grown by the Czochralski method journal September 2011
Scaling-Up of Bulk β-Ga 2 O 3 Single Crystals by the Czochralski Method journal September 2016
Large-size β-Ga2O3 single crystals and wafers journal October 2004
High-quality β-Ga 2 O 3 single crystals grown by edge-defined film-fed growth journal November 2016
Floating zone growth of β-Ga2O3: a new window material for optoelectronic device applications journal February 2001
Effect of annealing on the properties of Ga 2 O 3 :Mg films prepared on α-Al 2 O 3 (0001) by MOCVD journal February 2016
Compensation and hydrogen passivation of magnesium acceptors in β-Ga 2 O 3 journal July 2018
Electronic structure and optical property of metal-doped Ga 2 O 3 : a first principles study journal January 2016
Defects in ZnO journal October 2009
Structure and vibrational properties of the dominant O-H center in β-Ga 2 O 3 journal June 2018
Paramagnetic resonance and near-infrared optical absorption of SrTiO 3 :Ir 4+ journal March 1984

Cited By (1)

Iridium-related complexes in Czochralski-grown β-Ga 2 O 3 journal December 2019

Similar Records

Iridium-related complexes in Czochralski-grown β-Ga 2O3
Journal Article · Sat Dec 14 00:00:00 EST 2019 · Journal of Applied Physics · OSTI ID:1601471

Zinc–hydrogen and zinc–iridium pairs in β-Ga2O3
Journal Article · Thu Sep 09 00:00:00 EDT 2021 · Applied Physics Letters · OSTI ID:1601471

Gallium vacancy formation in oxygen annealed β-Ga2O3
Journal Article · Wed Jun 23 00:00:00 EDT 2021 · Journal of Applied Physics · OSTI ID:1601471