Zinc–hydrogen and zinc–iridium pairs in β-Ga2O3

Pansegrau, Christopher; Jesenovec, Jani; McCloy, John S.; McCluskey, Matthew D.

doi:10.1063/5.0062059

Title: Zinc–hydrogen and zinc–iridium pairs in β-Ga₂O₃

Journal Article · Thu Sep 09 00:00:00 EDT 2021 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0062059· OSTI ID:1829317

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Washington State Univ., Pullman, WA (United States)

Zinc-doped monoclinic gallium oxide (β-Ga₂O₃:Zn) has semi-insulating properties that could make it a preferred material as a substrate for power devices. In this work, infrared and UV/Visible spectroscopy were used to investigate the defect properties of bulk β-Ga₂O₃:Zn crystals. As-grown crystals contain a single O-H stretching mode at 3486.7 cm^-1 due to a neutral ZnH complex. A deuterium-annealed sample displays the corresponding O-D stretching mode at 2582.9 cm^-1, confirming the O-H assignment. A strong Ir⁴⁺ electronic transition at 5147.6 cm^-1 is also observed, along with sidebands attributed to ZnIr pairs. These sidebands show distinct differences compared with Mg-doped samples; most importantly, several peaks are attributed to Ir⁴⁺ paired with a Zn on the tetrahedral Ga(I) site. Annealing under an oxygen atmosphere produced insulating material with a resistance above 1 TΩ.

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Research Organization:: Washington State Univ., Pullman, WA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division; US Air Force Office of Scientific Research (AFOSR)

Grant/Contract Number:: FG02-07ER46386; FA9550-18-1-0507

OSTI ID:: 1829317

Journal Information:: Applied Physics Letters, Vol. 119, Issue 10; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Zinc–hydrogen and zinc–iridium pairs in β-Ga₂O₃