cm2-Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control

Hynek, David J.; Singhania, Raivat M.; Xu, Shiyu; Davis, Benjamin; Wang, Leizhi; Yarali, Milad; Pondick, Joshua V.; Woods, John M.; Strandwitz, Nicholas C.; Cha, Judy J.

doi:10.1021/acsnano.0c08069

Title: cm²-Scale Synthesis of MoTe₂ Thin Films with Large Grains and Layer Control

Journal Article · Thu Nov 19 00:00:00 EST 2020 · ACS Nano

DOI:https://doi.org/10.1021/acsnano.0c08069· OSTI ID:1777272

^[1]; Singhania, Raivat M. ^[2]; Xu, Shiyu ^[1]; Davis, Benjamin ^[2];

^[1]; Yarali, Milad ^[1];

^[1];

^[1]; Strandwitz, Nicholas C. ^[2];

^[1]

Yale Univ., West Haven, CT (United States)
Lehigh Univ., Bethlehem, PA (United States)

Owing to the small energy differences between its polymorphs, MoTe₂ can access a full spectrum of electronic states from the 2H semiconducting state to the 1T' semimetallic state and from the T_d Weyl semimetallic state to the superconducting state in the 1T' and T_d phase at low temperature. Thus, it is a model system for phase transformation studies as well as quantum phenomena such as the quantum spin Hall effect and topological superconductivity. Careful studies of MoTe₂ and its potential applications require large-area MoTe₂ thin films with high crystallinity and thickness control. Here, we present cm²-scale synthesis of 2H-MoTe₂ thin films with layer control and large grains that span several microns. Layer control is achieved by controlling the initial thickness of the precursor MoO_x thin films, which are deposited on sapphire substrates by atomic layer deposition and subsequently tellurized. Despite the van der Waals epitaxy, the precursor–substrate interface is found to critically determine the uniformity in thickness and grain size of the resulting MoTe₂ films: MoTe₂ grown on sapphire show uniform films while MoTe₂ grown on amorphous SiO₂ substrates form islands. Furthermore, this synthesis strategy decouples the layer control from the variabilities of growth conditions for robust growth results and is applicable to growing other transition-metal dichalcogenides with layer control.

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Research Organization:: Yale Univ., New Haven, CT (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)

Grant/Contract Number:: SC0014476; 1605129

OSTI ID:: 1777272

Journal Information:: ACS Nano, Vol. 15, Issue 1; ISSN 1936-0851

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
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thin-film synthesis
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chemical vapor deposition
phase-change material
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2D materials
thin films
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layers
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Title: cm2-Scale Synthesis of MoTe2 Thin Films with Large Grains and Layer Control

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References (45)

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Title: cm²-Scale Synthesis of MoTe₂ Thin Films with Large Grains and Layer Control