Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Zhang, Xiang; Jin, Zehua; Wang, Luqing; Hachtel, Jordan A.; Villarreal, Eduardo; Wang, Zixing; Ha, Teresa; Nakanishi, Yusuke; Tiwary, Chandra Sekhar; Lai, Jiawei; Dong, Liangliang; Yang, Jihui; Vajtai, Robert; Ringe, Emilie; Idrobo, Juan Carlos; Yakobson, Boris I.; Lou, Jun; Gambin, Vincent; Koltun, Rachel; Ajayan, Pulickel M.

doi:10.1021/acsami.9b00306

Low Contact Barrier in 2H/1T' MoTe₂ In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Journal Article · Mon Mar 11 00:00:00 EDT 2019 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.9b00306· OSTI ID:1507842

^[1]; ^[1]; Wang, Luqing ^[1]; ^[2]; Villarreal, Eduardo ^[1]; ^[1]; Ha, Teresa ^[3]; ^[1]; Tiwary, Chandra Sekhar ^[4]; Lai, Jiawei ^[1]; Dong, Liangliang ^[1]; Yang, Jihui ^[1]; ^[5]; ^[6]; Idrobo, Juan Carlos ^[2]; Yakobson, Boris I. ^[1]; ^[1]; ^[3]; Koltun, Rachel ^[3]; Ajayan, Pulickel M. ^[1]

Rice Univ., Houston, TX (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Northrop Grumman Corp., Redondo Beach, CA (United States)
Rice Univ., Houston, TX (United States); Indian Inst. of Technology Kharagpur, West Bengal (India)
Rice Univ., Houston, TX (United States); Univ. Szeged, Szeged (Hungary)
Rice Univ., Houston, TX (United States); Univ. of Cambridge, Cambridge (United Kingdom)

Metal–semiconductor contact has been an important topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. Here, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe₂) planarly contacted by its metallic phase (1T' MoTe₂). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe₂ films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation reflects a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.

View Accepted Manuscript (DOE)

Research Organization:: Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Scientific User Facilities Division

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1507842

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 13 Vol. 11; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (79)

Non-Lithographic Fabrication of All-2D α-MoTe ₂ Dual Gate Transistors Choi, Kyunghee; Lee, Young Tack; Kim, Jin Sung Advanced Functional Materials, Vol. 26, Issue 18 https://doi.org/10.1002/adfm.201505346	journal	March 2016
Graphene-Based Electrodes Huang, Xiao; Zeng, Zhiyuan; Fan, Zhanxi Advanced Materials, Vol. 24, Issue 45 https://doi.org/10.1002/adma.201201587	journal	August 2012
Ambipolar MoTe ₂ Transistors and Their Applications in Logic Circuits Lin, Yen-Fu; Xu, Yong; Wang, Sheng-Tsung Advanced Materials, Vol. 26, Issue 20 https://doi.org/10.1002/adma.201305845	journal	April 2014
Synthesis of High-Quality Large-Area Homogenous 1T′ MoTe ₂ from Chemical Vapor Deposition Zhou, Lin; Zubair, Ahmad; Wang, Ziqiang Advanced Materials, Vol. 28, Issue 43 https://doi.org/10.1002/adma.201602687	journal	September 2016
In-Plane 2H-1T′ MoTe ₂ Homojunctions Synthesized by Flux-Controlled Phase Engineering Yoo, Youngdong; DeGregorio, Zachary P.; Su, Yang Advanced Materials, Vol. 29, Issue 16 https://doi.org/10.1002/adma.201605461	journal	February 2017
Wafer-Scale Epitaxial 1T′, 1T′-2H Mixed, and 2H Phases MoTe ₂ Thin Films Grown by Metal-Organic Chemical Vapor Deposition Kim, TaeWan; Park, Hyeji; Joung, DaeHwa Advanced Materials Interfaces, Vol. 5, Issue 15 https://doi.org/10.1002/admi.201800439	journal	June 2018
Hexagonal Boron Nitride-Graphene Heterostructures: Synthesis and Interfacial Properties Li, Qiucheng; Liu, Mengxi; Zhang, Yanfeng Small, Vol. 12, Issue 1 https://doi.org/10.1002/smll.201501766	journal	October 2015
Models for contacts to planar devices Berger, H. H. Solid-State Electronics, Vol. 15, Issue 2 https://doi.org/10.1016/0038-1101(72)90048-2	journal	February 1972
Two-Step Growth of Two-Dimensional WSe ₂ /MoSe ₂ Heterostructures Gong, Yongji; Lei, Sidong; Ye, Gonglan Nano Letters, Vol. 15, Issue 9 https://doi.org/10.1021/acs.nanolett.5b02423	journal	August 2015
Room Temperature Semiconductor–Metal Transition of MoTe ₂ Thin Films Engineered by Strain Song, Seunghyun; Keum, Dong Hoon; Cho, Suyeon Nano Letters, Vol. 16, Issue 1 https://doi.org/10.1021/acs.nanolett.5b03481	journal	December 2015
Metal–Insulator–Semiconductor Diode Consisting of Two-Dimensional Nanomaterials Jeong, Hyun; Oh, Hye Min; Bang, Seungho Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b04936	journal	February 2016
Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe ₂ , MoS ₂ , and MoSe ₂ Transistors Chuang, Hsun-Jen; Chamlagain, Bhim; Koehler, Michael Nano Letters, Vol. 16, Issue 3 https://doi.org/10.1021/acs.nanolett.5b05066	journal	February 2016
Gate-Tunable Atomically Thin Lateral MoS ₂ Schottky Junction Patterned by Electron Beam Katagiri, Y.; Nakamura, T.; Ishii, A. Nano Letters, Vol. 16, Issue 6 https://doi.org/10.1021/acs.nanolett.6b01186	journal	May 2016
Improved Contacts to MoS ₂ Transistors by Ultra-High Vacuum Metal Deposition English, Chris D.; Shine, Gautam; Dorgan, Vincent E. Nano Letters, Vol. 16, Issue 6 https://doi.org/10.1021/acs.nanolett.6b01309	journal	May 2016
Monolayer Single-Crystal 1T′-MoTe ₂ Grown by Chemical Vapor Deposition Exhibits Weak Antilocalization Effect Naylor, Carl H.; Parkin, William M.; Ping, Jinglei Nano Letters, Vol. 16, Issue 7 https://doi.org/10.1021/acs.nanolett.6b01342	journal	June 2016
Carrier Delocalization in Two-Dimensional Coplanar p–n Junctions of Graphene and Metal Dichalcogenides Yu, Henry; Kutana, Alex; Yakobson, Boris I. Nano Letters, Vol. 16, Issue 8 https://doi.org/10.1021/acs.nanolett.6b01822	journal	July 2016
Alloyed 2D Metal–Semiconductor Heterojunctions: Origin of Interface States Reduction and Schottky Barrier Lowering Kim, Yonghun; Kim, Ah Ra; Yang, Jin Ho Nano Letters, Vol. 16, Issue 9 https://doi.org/10.1021/acs.nanolett.6b02893	journal	August 2016
In Situ Optical Tracking of Electroablation in Two-Dimensional Transition-Metal Dichalcogenides Kumar, Anjli; Sebastian, Amritanand; Das, Saptarshi ACS Applied Materials & Interfaces, Vol. 10, Issue 47 https://doi.org/10.1021/acsami.8b14585	journal	November 2018
Environmental Changes in MoTe ₂ Excitonic Dynamics by Defects-Activated Molecular Interaction Chen, Bin; Sahin, Hasan; Suslu, Aslihan ACS Nano, Vol. 9, Issue 5 https://doi.org/10.1021/acsnano.5b00985	journal	April 2015
Reversible Semiconducting-to-Metallic Phase Transition in Chemical Vapor Deposition Grown Monolayer WSe ₂ and Applications for Devices Ma, Yuqiang; Liu, Bilu; Zhang, Anyi ACS Nano, Vol. 9, Issue 7 https://doi.org/10.1021/acsnano.5b02399	journal	June 2015
Phase-Engineered Synthesis of Centimeter-Scale 1T′- and 2H-Molybdenum Ditelluride Thin Films Park, Jin Cheol; Yun, Seok Joon; Kim, Hyun ACS Nano, Vol. 9, Issue 6 https://doi.org/10.1021/acsnano.5b02511	journal	May 2015
Electronic Properties of MoS ₂ –WS ₂ Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy Chen, Kun; Wan, Xi; Wen, Jinxiu ACS Nano, Vol. 9, Issue 10 https://doi.org/10.1021/acsnano.5b03188	journal	September 2015
Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe ₂ /MoS ₂ van der Waals Heterostructures Zhang, Kenan; Zhang, Tianning; Cheng, Guanghui ACS Nano, Vol. 10, Issue 3 https://doi.org/10.1021/acsnano.6b00980	journal	February 2016
Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p – n Heterojunctions Xu, Yang; Cheng, Cheng; Du, Sichao ACS Nano, Vol. 10, Issue 5 https://doi.org/10.1021/acsnano.6b01842	journal	May 2016
Chemical Vapor Deposition Growth of Few-Layer MoTe ₂ in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe ₂ Films Empante, Thomas A.; Zhou, Yao; Klee, Velveth ACS Nano, Vol. 11, Issue 1 https://doi.org/10.1021/acsnano.6b07499	journal	January 2017
Tellurization Velocity-Dependent Metallic–Semiconducting–Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe ₂ Yang, Li; Zhang, Wenfeng; Li, Jie ACS Nano, Vol. 11, Issue 2 https://doi.org/10.1021/acsnano.6b08109	journal	February 2017
Reconfigurable Complementary Monolayer MoTe ₂ Field-Effect Transistors for Integrated Circuits Larentis, Stefano; Fallahazad, Babak; Movva, Hema C. P. ACS Nano, Vol. 11, Issue 5 https://doi.org/10.1021/acsnano.7b01306	journal	April 2017
Large-Area Synthesis of High-Quality Uniform Few-Layer MoTe ₂ Zhou, Lin; Xu, Kai; Zubair, Ahmad Journal of the American Chemical Society, Vol. 137, Issue 37 https://doi.org/10.1021/jacs.5b07452	journal	September 2015
High-Performance Single Layered WSe₂ p-FETs with Chemically Doped Contacts Fang, Hui; Chuang, Steven; Chang, Ting Chia Nano Letters, Vol. 12, Issue 7, p. 3788-3792 https://doi.org/10.1021/nl301702r	journal	June 2012
High Performance Multilayer MoS₂Transistors with Scandium Contacts Das, Saptarshi; Chen, Hong-Yan; Penumatcha, Ashish Verma Nano Letters, Vol. 13, Issue 1, p. 100-105 https://doi.org/10.1021/nl303583v	journal	December 2012
Role of Metal Contacts in Designing High-Performance Monolayer n-Type WSe ₂ Field Effect Transistors Liu, Wei; Kang, Jiahao; Sarkar, Deblina Nano Letters, Vol. 13, Issue 5 https://doi.org/10.1021/nl304777e	journal	April 2013
All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor Das, Saptarshi; Gulotty, Richard; Sumant, Anirudha V. Nano Letters, Vol. 14, Issue 5 https://doi.org/10.1021/nl5009037	journal	April 2014
High Mobility WSe ₂ p - and n - Type Field-Effect Transistors Contacted by Highly Doped Graphene for Low-Resistance Contacts Chuang, Hsun-Jen; Tan, Xuebin; Ghimire, Nirmal Jeevi Nano Letters, Vol. 14, Issue 6 https://doi.org/10.1021/nl501275p	journal	May 2014
Optical Properties and Band Gap of Single- and Few-Layer MoTe ₂ Crystals Ruppert, Claudia; Aslan, Ozgur Burak; Heinz, Tony F. Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl502557g	journal	October 2014
Stretching and Breaking of Ultrathin MoS ₂ Bertolazzi, Simone; Brivio, Jacopo; Kis, Andras ACS Nano, Vol. 5, Issue 12 https://doi.org/10.1021/nn203879f	journal	November 2011
Plasmon-Induced Doping of Graphene Fang, Zheyu; Wang, Yumin; Liu, Zheng ACS Nano, Vol. 6, Issue 11 https://doi.org/10.1021/nn304028b	journal	September 2012
Evolution of Electronic Structure in Atomically Thin Sheets of WS ₂ and WSe ₂ Zhao, Weijie; Ghorannevis, Zohreh; Chu, Leiqiang ACS Nano, Vol. 7, Issue 1 https://doi.org/10.1021/nn305275h	journal	December 2012
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe ₂ Yamamoto, Mahito; Wang, Sheng Tsung; Ni, Meiyan ACS Nano, Vol. 8, Issue 4 https://doi.org/10.1021/nn5007607	journal	March 2014
Field-Effect Transistors Based on Few-Layered α-MoTe ₂ Pradhan, Nihar R.; Rhodes, Daniel; Feng, Simin ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn501013c	journal	May 2014
Field-Effect Transistors Built from All Two-Dimensional Material Components Roy, Tania; Tosun, Mahmut; Kang, Jeong Seuk ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn501723y	journal	May 2014
Two-dimensional gas of massless Dirac fermions in graphene Novoselov, K. S.; Geim, A. K.; Morozov, S. V. Nature, Vol. 438, Issue 7065, p. 197-200 https://doi.org/10.1038/nature04233	journal	November 2005
Superconductivity in Weyl semimetal candidate MoTe2 Qi, Yanpeng; Naumov, Pavel G.; Ali, Mazhar N. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11038	journal	March 2016
Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers Duerloo, Karel-Alexander N.; Li, Yao; Reed, Evan J. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5214	journal	July 2014
Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures Rivera, Pasqual; Schaibley, John R.; Jones, Aaron M. Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms7242	journal	February 2015
Determination of band alignment in the single-layer MoS2/WSe2 heterojunction Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei Nature Communications, Vol. 6, Issue 1 https://doi.org/10.1038/ncomms8666	journal	July 2015
Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru Nature Materials, Vol. 13, Issue 12, p. 1128-1134 https://doi.org/10.1038/nmat4080	journal	August 2014
Vertical and in-plane heterostructures from WS₂/MoS₂ monolayers Gong, Yongji; Lin, Junhao; Wang, Xingli Nature Materials, Vol. 13, Issue 12, p. 1135-1142 https://doi.org/10.1038/nmat4091	journal	September 2014
Electrical contacts to two-dimensional semiconductors Allain, Adrien; Kang, Jiahao; Banerjee, Kaustav Nature Materials, Vol. 14, Issue 12 https://doi.org/10.1038/nmat4452	journal	November 2015
Boron nitride substrates for high-quality graphene electronics Dean, C. R.; Young, A. F.; Meric, I. Nature Nanotechnology, Vol. 5, Issue 10, p. 722-726 https://doi.org/10.1038/nnano.2010.172	journal	August 2010
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
In-plane heterostructures of graphene and hexagonal boron nitride with controlled domain sizes Liu, Zheng; Ma, Lulu; Shi, Gang Nature Nanotechnology, Vol. 8, Issue 2 https://doi.org/10.1038/nnano.2012.256	journal	January 2013
Graphene–MoS2 hybrid structures for multifunctional photoresponsive memory devices Roy, Kallol; Padmanabhan, Medini; Goswami, Srijit Nature Nanotechnology, Vol. 8, Issue 11 https://doi.org/10.1038/nnano.2013.206	journal	October 2013
Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2 Zhang, Yi; Chang, Tay-Rong; Zhou, Bo Nature Nanotechnology, Vol. 9, Issue 2 https://doi.org/10.1038/nnano.2013.277	journal	December 2013
Ultrafast charge transfer in atomically thin MoS2/WS2 heterostructures Hong, Xiaoping; Kim, Jonghwan; Shi, Su-Fei Nature Nanotechnology, Vol. 9, Issue 9 https://doi.org/10.1038/nnano.2014.167	journal	August 2014
Observation of piezoelectricity in free-standing monolayer MoS2 Zhu, Hanyu; Wang, Yuan; Xiao, Jun Nature Nanotechnology, Vol. 10, Issue 2 https://doi.org/10.1038/nnano.2014.309	journal	December 2014
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 Lin, Yung-Chang; Dumcenco, Dumitru O.; Huang, Ying-Sheng Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.64	journal	April 2014
A phosphorene–graphene hybrid material as a high-capacity anode for sodium-ion batteries Sun, Jie; Lee, Hyun-Wook; Pasta, Mauro Nature Nanotechnology, Vol. 10, Issue 11 https://doi.org/10.1038/nnano.2015.194	journal	September 2015
Coplanar semiconductor–metal circuitry defined on few-layer MoTe2 via polymorphic heteroepitaxy Sung, Ji Ho; Heo, Hoseok; Si, Saerom Nature Nanotechnology, Vol. 12, Issue 11 https://doi.org/10.1038/nnano.2017.161	journal	September 2017
Two-dimensional material nanophotonics Xia, Fengnian; Wang, Han; Xiao, Di Nature Photonics, Vol. 8, Issue 12 https://doi.org/10.1038/nphoton.2014.271	journal	November 2014
Bandgap opening in few-layered monoclinic MoTe2 Keum, Dong Hoon; Cho, Suyeon; Kim, Jung Ho Nature Physics, Vol. 11, Issue 6 https://doi.org/10.1038/nphys3314	journal	May 2015
Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2 Deng, Ke; Wan, Guoliang; Deng, Peng Nature Physics, Vol. 12, Issue 12 https://doi.org/10.1038/nphys3871	journal	September 2016
Photo-tunable transfer characteristics in MoTe2–MoS2 vertical heterostructure Paul, Arup Kumar; Kuiri, Manabendra; Saha, Dipankar npj 2D Materials and Applications, Vol. 1, Issue 1 https://doi.org/10.1038/s41699-017-0017-3	journal	June 2017
In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep14760	journal	October 2015
Phase stability and Raman vibration of the molybdenum ditelluride (MoTe ₂ ) monolayer Kan, Min; Nam, Hong Gi; Lee, Young Hee Physical Chemistry Chemical Physics, Vol. 17, Issue 22 https://doi.org/10.1039/C5CP01649E	journal	January 2015
Atomistic modeling of the metallic-to-semiconducting phase boundaries in monolayer MoS ₂ Saha, Dipankar; Mahapatra, Santanu Applied Physics Letters, Vol. 108, Issue 25 https://doi.org/10.1063/1.4954257	journal	June 2016
Post-patterning of an electronic homojunction in atomically thin monoclinic MoTe ₂ Kim, Sera; Kim, Jung Ho; Kim, Dohyun 2D Materials, Vol. 4, Issue 2 https://doi.org/10.1088/2053-1583/aa5b0e	journal	February 2017
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set Kresse, G.; Furthmüller, J. Physical Review B, Vol. 54, Issue 16, p. 11169-11186 https://doi.org/10.1103/PhysRevB.54.11169	journal	October 1996
Extremely large magnetoresistance in the type-II Weyl semimetal Mo Te 2 Chen, F. C.; Lv, H. Y.; Luo, X. Physical Review B, Vol. 94, Issue 23 https://doi.org/10.1103/PhysRevB.94.235154	journal	December 2016
Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals Aras, Mehmet; Kılıç, Çetin; Ciraci, S. Physical Review B, Vol. 95, Issue 7 https://doi.org/10.1103/PhysRevB.95.075434	journal	February 2017
In-plane Schottky-barrier field-effect transistors based on 1 T /2 H heterojunctions of transition-metal dichalcogenides Fan, Zhi-Qiang; Jiang, Xiang-Wei; Luo, Jun-Wei Physical Review B, Vol. 96, Issue 16 https://doi.org/10.1103/PhysRevB.96.165402	journal	October 2017
Atomically Thin MoS2 A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Designing Electrical Contacts to MoS 2 Monolayers: A Computational Study Popov, Igor; Seifert, Gotthard; Tománek, David Physical Review Letters, Vol. 108, Issue 15 https://doi.org/10.1103/PhysRevLett.108.156802	journal	April 2012
Computational Study of Metal Contacts to Monolayer Transition-Metal Dichalcogenide Semiconductors Kang, Jiahao; Liu, Wei; Sarkar, Deblina Physical Review X, Vol. 4, Issue 3 https://doi.org/10.1103/PhysRevX.4.031005	journal	July 2014
Asymmetric Junctions in Metallic–Semiconducting–Metallic Heterophase MoS ₂ Saha, Dipankar; Mahapatra, Santanu IEEE Transactions on Electron Devices, Vol. 64, Issue 5 https://doi.org/10.1109/TED.2017.2680453	journal	May 2017
Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier Liu, Yuanyue; Stradins, Paul; Wei, Su-Huai Science Advances, Vol. 2, Issue 4 https://doi.org/10.1126/sciadv.1600069	journal	April 2016
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Room-Temperature Quantum Hall Effect in Graphene Novoselov, K. S.; Jiang, Z.; Zhang, Y. Science, Vol. 315, Issue 5817 https://doi.org/10.1126/science.1137201	journal	March 2007
Phase patterning for ohmic homojunction contact in MoTe2 Cho, S.; Kim, S.; Kim, J. H. Science, Vol. 349, Issue 6248 https://doi.org/10.1126/science.aab3175	journal	August 2015
Micro-Extinction Spectroscopy (MExS): a versatile optical characterization technique Kumar, Anjli; Villarreal, Eduardo; Zhang, Xiang Advanced Structural and Chemical Imaging, Vol. 4, Issue 1 https://doi.org/10.1186/s40679-018-0057-6	journal	July 2018

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Ultrafast carrier and phonon dynamics in few-layer 2H–MoTe ₂ Chi, Zhen; Chen, Hailong; Zhao, Qing The Journal of Chemical Physics, Vol. 151, Issue 11 https://doi.org/10.1063/1.5115467	journal	September 2019

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36 MATERIALS SCIENCE
MoTe2
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