Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Zhang, Xiang; Jin, Zehua; Wang, Luqing; Hachtel, Jordan A.; Villarreal, Eduardo; Wang, Zixing; Ha, Teresa; Nakanishi, Yusuke; Tiwary, Chandra Sekhar; Lai, Jiawei; Dong, Liangliang; Yang, Jihui; Vajtai, Robert; Ringe, Emilie; Idrobo, Juan Carlos; Yakobson, Boris I.; Lou, Jun; Gambin, Vincent; Koltun, Rachel; Ajayan, Pulickel M.

doi:10.1021/acsami.9b00306

Title: Low Contact Barrier in 2H/1T' MoTe₂ In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

Journal Article · Mon Mar 11 00:00:00 EDT 2019 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.9b00306· OSTI ID:1507842

^[1];

^[1]; Wang, Luqing ^[1];

^[2]; Villarreal, Eduardo ^[1];

^[1]; Ha, Teresa ^[3];

^[1]; Tiwary, Chandra Sekhar ^[4]; Lai, Jiawei ^[1]; Dong, Liangliang ^[1]; Yang, Jihui ^[1];

^[5];

^[6]; Idrobo, Juan Carlos ^[2]; Yakobson, Boris I. ^[1];

^[1];

^[3]; Koltun, Rachel ^[3]; Ajayan, Pulickel M. ^[1]

Rice Univ., Houston, TX (United States)
Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
Northrop Grumman Corp., Redondo Beach, CA (United States)
Rice Univ., Houston, TX (United States); Indian Inst. of Technology Kharagpur, West Bengal (India)
Rice Univ., Houston, TX (United States); Univ. Szeged, Szeged (Hungary)
Rice Univ., Houston, TX (United States); Univ. of Cambridge, Cambridge (United Kingdom)

Metal–semiconductor contact has been an important topic in the semiconductor industry because it influences device performance remarkably. Conventional metals have served as the major contact material in electronic and optoelectronic devices, but such a selection becomes increasingly inadequate for emerging novel materials such as two-dimensional (2D) materials. Deposited metals on semiconducting 2D channels usually form large resistance contacts due to the high Schottky barrier. A few approaches have been reported to reduce the contact resistance but they are not suitable for large-scale application or they cannot create a clean and sharp interface. Here, a chemical vapor deposition (CVD) technique is introduced to produce large-area semiconducting 2D material (2H MoTe₂) planarly contacted by its metallic phase (1T' MoTe₂). We demonstrate the phase-controllable synthesis and systematic characterization of large-area MoTe₂ films, including pure 2H phase or 1T' phase, and 2H/1T' in-plane heterostructure. Theoretical simulation reflects a lower Schottky barrier in 2H/1T' junction than in Ti/2H contact, which is confirmed by electrical measurement. This one-step CVD method to synthesize large-area, seamless-bonding 2D lateral metal–semiconductor junction can improve the performance of 2D electronic and optoelectronic devices, paving the way for large-scale 2D integrated circuits.

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Research Organization:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities Division

Grant/Contract Number:: AC05-00OR22725

OSTI ID:: 1507842

Journal Information:: ACS Applied Materials and Interfaces, Vol. 11, Issue 13; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 47 works

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Title: Low Contact Barrier in 2H/1T' MoTe2 In-Plane Heterostructure Synthesized by Chemical Vapor Deposition

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Title: Low Contact Barrier in 2H/1T' MoTe₂ In-Plane Heterostructure Synthesized by Chemical Vapor Deposition