Photocarrier Dynamics in MoTe2 Nanofilms with 2H and Distorted 1T Lattice Structures

Han, Xiuxiu; Liang, Xingyao; He, Dawei; Jiao, Liying; Wang, Yongsheng; Zhao, Hui

doi:10.1021/acsami.1c09698

Photocarrier Dynamics in MoTe₂ Nanofilms with 2H and Distorted 1T Lattice Structures

Journal Article · Wed Sep 08 00:00:00 EDT 2021 · ACS Applied Materials and Interfaces

DOI:https://doi.org/10.1021/acsami.1c09698· OSTI ID:1864729

^[1]; Liang, Xingyao ^[2]; He, Dawei ^[3]; ^[2]; Wang, Yongsheng ^[3]; ^[4]

Beijing Jiaotong Univ. (China); The University of Kansas
Tsinghua Univ., Beijing (China)
Beijing Jiaotong Univ. (China)
Univ. of Kansas, Lawrence, KS (United States)

Molybdenum telluride (MoTe₂), an emerging layered two-dimensional (2D) material, possesses excellent phase-changing properties. Previous studies revealed its reversible transition between 2H and 1T' phases with a transition energy as small as 35 meV. Since 1T'-MoTe₂ is metallic, it can serve as an electrical contact for semiconducting 2H-MoTe₂-based optoelectronic devices. Here, the photocarrier dynamics in MoTe₂ nanofilms synthesized by a one-step method and with coexisting multiple phases are investigated by transient absorption measurements. Both the energy relaxation time and the recombination lifetime of the excitons are shorter in the 1T'-MoTe₂ compared to its 2H phase. Furthermore, these results provide information on the different photocarrier dynamical properties of these two phases, which is important for future 2D optoelectronic and phase-change electronic devices based on MoTe₂.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES). Materials Sciences & Engineering Division

Grant/Contract Number:: SC0020995

OSTI ID:: 1864729

Alternate ID(s):: OSTI ID: 1853695

Journal Information:: ACS Applied Materials and Interfaces, Journal Name: ACS Applied Materials and Interfaces Journal Issue: 37 Vol. 13; ISSN 1944-8244

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

References (66)

Two-Dimensional Molybdenum Trioxide and Dichalcogenides Balendhran, Sivacarendran; Walia, Sumeet; Nili, Hussein Advanced Functional Materials, Vol. 23, Issue 32 https://doi.org/10.1002/adfm.201300125	journal	April 2013
Ultrafast Laser Spectroscopy of Two-Dimensional Materials Beyond Graphene Ceballos, Frank; Zhao, Hui Advanced Functional Materials, Vol. 27, Issue 19 https://doi.org/10.1002/adfm.201604509	journal	December 2016
Ambipolar MoTe ₂ Transistors and Their Applications in Logic Circuits Lin, Yen-Fu; Xu, Yong; Wang, Sheng-Tsung Advanced Materials, Vol. 26, Issue 20 https://doi.org/10.1002/adma.201305845	journal	April 2014
Synthesis of High-Quality Large-Area Homogenous 1T′ MoTe ₂ from Chemical Vapor Deposition Zhou, Lin; Zubair, Ahmad; Wang, Ziqiang Advanced Materials, Vol. 28, Issue 43 https://doi.org/10.1002/adma.201602687	journal	September 2016
Large-Area and High-Quality 2D Transition Metal Telluride Zhou, Jiadong; Liu, Fucai; Lin, Junhao Advanced Materials, Vol. 29, Issue 3 https://doi.org/10.1002/adma.201603471	journal	November 2016
Anisotropic Broadband Photoresponse of Layered Type-II Weyl Semimetal MoTe ₂ Lai, Jiawei; Liu, Xin; Ma, Junchao Advanced Materials, Vol. 30, Issue 22 https://doi.org/10.1002/adma.201707152	journal	April 2018
Electronic and Optoelectronic Applications Based on 2D Novel Anisotropic Transition Metal Dichalcogenides Gong, Chuanhui; Zhang, Yuxi; Chen, Wei Advanced Science, Vol. 4, Issue 12 https://doi.org/10.1002/advs.201700231	journal	October 2017
2D MoTe ₂ : Linear Dichroism and Nondestructive Crystalline Identification of Anisotropic Semimetal Few‐Layer MoTe ₂ (Small 44/2019) Zhu, Meijie; Zhao, Yan; Feng, Qingliang Small, Vol. 15, Issue 44 https://doi.org/10.1002/smll.201970239	journal	October 2019
Room Temperature Semiconductor–Metal Transition of MoTe ₂ Thin Films Engineered by Strain Song, Seunghyun; Keum, Dong Hoon; Cho, Suyeon Nano Letters, Vol. 16, Issue 1 https://doi.org/10.1021/acs.nanolett.5b03481	journal	December 2015
Direct Observation of Ultrafast Exciton Formation in a Monolayer of WSe ₂ Steinleitner, Philipp; Merkl, Philipp; Nagler, Philipp Nano Letters, Vol. 17, Issue 3 https://doi.org/10.1021/acs.nanolett.6b04422	journal	February 2017
Electronic Origin of Optically-Induced Sub-Picosecond Lattice Dynamics in MoSe ₂ Monolayer Bassman, Lindsay; Krishnamoorthy, Aravind; Kumazoe, Hiroyuki Nano Letters, Vol. 18, Issue 8 https://doi.org/10.1021/acs.nanolett.8b00474	journal	July 2018
Dense Electron–Hole Plasma Formation and Ultralong Charge Lifetime in Monolayer MoS ₂ via Material Tuning Bataller, Alexander W.; Younts, Robert A.; Rustagi, Avinash Nano Letters, Vol. 19, Issue 2 https://doi.org/10.1021/acs.nanolett.8b04408	journal	January 2019
Optical Control of Non-Equilibrium Phonon Dynamics Krishnamoorthy, Aravind; Lin, Ming-Fu; Zhang, Xiang Nano Letters, Vol. 19, Issue 8 https://doi.org/10.1021/acs.nanolett.9b01179	journal	June 2019
Understanding Spatiotemporal Photocarrier Dynamics in Monolayer and Bulk MoTe ₂ for Optimized Optoelectronic Devices Pan, Shudi; Kong, Weijin; Liu, Jianhua ACS Applied Nano Materials, Vol. 2, Issue 1 https://doi.org/10.1021/acsanm.8b02008	journal	December 2018
Chemical Vapor Deposition Growth of Few-Layer MoTe ₂ in the 2H, 1T′, and 1T Phases: Tunable Properties of MoTe ₂ Films Empante, Thomas A.; Zhou, Yao; Klee, Velveth ACS Nano, Vol. 11, Issue 1 https://doi.org/10.1021/acsnano.6b07499	journal	January 2017
MoTe ₂ Lateral Homojunction Field-Effect Transistors Fabricated using Flux-Controlled Phase Engineering Ma, Rui; Zhang, Huairuo; Yoo, Youngdong ACS Nano, Vol. 13, Issue 7 https://doi.org/10.1021/acsnano.9b02785	journal	June 2019
Atomic Mechanism of Dynamic Electrochemical Lithiation Processes of MoS ₂ Nanosheets Wang, Lifen; Xu, Zhi; Wang, Wenlong Journal of the American Chemical Society, Vol. 136, Issue 18 https://doi.org/10.1021/ja501686w	journal	April 2014
Argon Plasma Induced Phase Transition in Monolayer MoS 2 Zhu, Jianqi; Wang, Zhichang; Yu, Hua Journal of the American Chemical Society, Vol. 139, Issue 30 https://doi.org/10.1021/jacs.7b05765	journal	July 2017
Structures and Phase Transition of a MoS ₂ Monolayer Kan, M.; Wang, J. Y.; Li, X. W. The Journal of Physical Chemistry C, Vol. 118, Issue 3 https://doi.org/10.1021/jp4076355	journal	January 2014
Photovoltaic Heterojunctions of Fullerenes with MoS ₂ and WS ₂ Monolayers Gan, Li-Yong; Zhang, Qingyun; Cheng, Yingchun The Journal of Physical Chemistry Letters, Vol. 5, Issue 8 https://doi.org/10.1021/jz500344s	journal	March 2014
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials Bernardi, Marco; Palummo, Maurizia; Grossman, Jeffrey C. Nano Letters, Vol. 13, Issue 8, p. 3664-3670 https://doi.org/10.1021/nl401544y	journal	July 2013
Observation of Rapid Exciton–Exciton Annihilation in Monolayer Molybdenum Disulfide Sun, Dezheng; Rao, Yi; Reider, Georg A. Nano Letters, Vol. 14, Issue 10 https://doi.org/10.1021/nl5021975	journal	September 2014
Optical Properties and Band Gap of Single- and Few-Layer MoTe ₂ Crystals Ruppert, Claudia; Aslan, Ozgur Burak; Heinz, Tony F. Nano Letters, Vol. 14, Issue 11 https://doi.org/10.1021/nl502557g	journal	October 2014
Ultrafast Dynamics of Defect-Assisted Electron–Hole Recombination in Monolayer MoS ₂ Wang, Haining; Zhang, Changjian; Rana, Farhan Nano Letters, Vol. 15, Issue 1 https://doi.org/10.1021/nl503636c	journal	December 2014
Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe ₂ Lezama, Ignacio Gutiérrez; Arora, Ashish; Ubaldini, Alberto Nano Letters, Vol. 15, Issue 4 https://doi.org/10.1021/nl5045007	journal	March 2015
Stretching and Breaking of Ultrathin MoS ₂ Bertolazzi, Simone; Brivio, Jacopo; Kis, Andras ACS Nano, Vol. 5, Issue 12 https://doi.org/10.1021/nn203879f	journal	November 2011
Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe ₂ Yamamoto, Mahito; Wang, Sheng Tsung; Ni, Meiyan ACS Nano, Vol. 8, Issue 4 https://doi.org/10.1021/nn5007607	journal	March 2014
Field-Effect Transistors Based on Few-Layered α-MoTe ₂ Pradhan, Nihar R.; Rhodes, Daniel; Feng, Simin ACS Nano, Vol. 8, Issue 6 https://doi.org/10.1021/nn501013c	journal	May 2014
Ultrafast Transient Terahertz Conductivity of Monolayer MoS ₂ and WSe ₂ Grown by Chemical Vapor Deposition Docherty, Callum J.; Parkinson, Patrick; Joyce, Hannah J. ACS Nano, Vol. 8, Issue 11 https://doi.org/10.1021/nn5034746	journal	November 2014
2D transition metal dichalcogenides Manzeli, Sajedeh; Ovchinnikov, Dmitry; Pasquier, Diego Nature Reviews Materials, Vol. 2, Issue 8 https://doi.org/10.1038/natrevmats.2017.33	journal	June 2017
Superconductivity in Weyl semimetal candidate MoTe2 Qi, Yanpeng; Naumov, Pavel G.; Ali, Mazhar N. Nature Communications, Vol. 7, Issue 1 https://doi.org/10.1038/ncomms11038	journal	March 2016
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices Sup Choi, Min; Lee, Gwan-Hyoung; Yu, Young-Jun Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2652	journal	March 2013
Structural phase transitions in two-dimensional Mo- and W-dichalcogenide monolayers Duerloo, Karel-Alexander N.; Li, Yao; Reed, Evan J. Nature Communications, Vol. 5, Issue 1 https://doi.org/10.1038/ncomms5214	journal	July 2014
The rise of graphene Geim, A. K.; Novoselov, K. S. Nature Materials, Vol. 6, Issue 3, p. 183-191 https://doi.org/10.1038/nmat1849	journal	March 2007
Phase-engineered low-resistance contacts for ultrathin MoS₂ transistors Kappera, Rajesh; Voiry, Damien; Yalcin, Sibel Ebru Nature Materials, Vol. 13, Issue 12, p. 1128-1134 https://doi.org/10.1038/nmat4080	journal	August 2014
Single-layer MoS₂ transistors Radisavljevic, B.; Radenovic, A.; Brivio, J. Nature Nanotechnology, Vol. 6, Issue 3, p. 147-150 https://doi.org/10.1038/nnano.2010.279	journal	January 2011
Atomic mechanism of the semiconducting-to-metallic phase transition in single-layered MoS2 Lin, Yung-Chang; Dumcenco, Dumitru O.; Huang, Ying-Sheng Nature Nanotechnology, Vol. 9, Issue 5 https://doi.org/10.1038/nnano.2014.64	journal	April 2014
Bandgap opening in few-layered monoclinic MoTe2 Keum, Dong Hoon; Cho, Suyeon; Kim, Jung Ho Nature Physics, Vol. 11, Issue 6 https://doi.org/10.1038/nphys3314	journal	May 2015
Structural and quantum-state phase transitions in van der Waals layered materials Yang, Heejun; Kim, Sung Wng; Chhowalla, Manish Nature Physics, Vol. 13, Issue 10 https://doi.org/10.1038/nphys4188	journal	July 2017
Carrier multiplication in van der Waals layered transition metal dichalcogenides Kim, Ji-Hee; Bergren, Matthew R.; Park, Jin Cheol Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-13325-9	journal	December 2019
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures Zhang, Wenjing; Chuu, Chih-Piao; Huang, Jing-Kai Scientific Reports, Vol. 4, Issue 1 https://doi.org/10.1038/srep03826	journal	January 2014
Phase stability and Raman vibration of the molybdenum ditelluride (MoTe ₂ ) monolayer Kan, Min; Nam, Hong Gi; Lee, Young Hee Physical Chemistry Chemical Physics, Vol. 17, Issue 22 https://doi.org/10.1039/C5CP01649E	journal	January 2015
Exciton formation in monolayer transition metal dichalcogenides Ceballos, Frank; Cui, Qiannan; Bellus, Matthew Z. Nanoscale, Vol. 8, Issue 22 https://doi.org/10.1039/C6NR02516A	journal	January 2016
Controllable 2H-to-1T′ phase transition in few-layer MoTe ₂ Tan, Yuan; Luo, Fang; Zhu, Mengjian Nanoscale, Vol. 10, Issue 42 https://doi.org/10.1039/C8NR06115G	journal	January 2018
Low-temperature photocarrier dynamics in monolayer MoS ₂ Korn, T.; Heydrich, S.; Hirmer, M. Applied Physics Letters, Vol. 99, Issue 10 https://doi.org/10.1063/1.3636402	journal	September 2011
Exciton dynamics in WSe ₂ bilayers Wang, G.; Marie, X.; Bouet, L. Applied Physics Letters, Vol. 105, Issue 18 https://doi.org/10.1063/1.4900945	journal	November 2014
High temperature Raman investigation of few-layer MoTe ₂ Zhang, Hongguang; Zhou, Wei; Li, Xuefei Applied Physics Letters, Vol. 108, Issue 9 https://doi.org/10.1063/1.4943139	journal	February 2016
The electrical properties and the magnitude of the indirect gap in the semiconducting transition metal dichalcogenide layer crystals Grant, A. J.; Griffiths, T. M.; Pitt, G. D. Journal of Physics C: Solid State Physics, Vol. 8, Issue 1 https://doi.org/10.1088/0022-3719/8/1/004	journal	January 1975
An ultrafast terahertz probe of the transient evolution of the charged and neutral phase of photo-excited electron-hole gas in a monolayer semiconductor Liu, Xuefeng; Yu, Hongyi; Ji, Qingqing 2D Materials, Vol. 3, Issue 1 https://doi.org/10.1088/2053-1583/3/1/014001	journal	January 2016
Transient absorption of transition metal dichalcogenide monolayers studied by a photodope-pump-probe technique Valencia-Acuna, Pavel; Zereshki, Peymon; Tavakoli, Mohammad Mahdi Physical Review B, Vol. 102, Issue 3 https://doi.org/10.1103/PhysRevB.102.035414	journal	July 2020
Ultrafast and spatially resolved studies of charge carriers in atomically thin molybdenum disulfide Wang, Rui; Ruzicka, Brian A.; Kumar, Nardeep Physical Review B, Vol. 86, Issue 4 https://doi.org/10.1103/PhysRevB.86.045406	journal	July 2012
Exciton-exciton annihilation in MoSe 2 monolayers Kumar, Nardeep; Cui, Qiannan; Ceballos, Frank Physical Review B, Vol. 89, Issue 12 https://doi.org/10.1103/PhysRevB.89.125427	journal	March 2014
Valley dynamics probed through charged and neutral exciton emission in monolayer WSe 2 Wang, G.; Bouet, L.; Lagarde, D. Physical Review B, Vol. 90, Issue 7 https://doi.org/10.1103/PhysRevB.90.075413	journal	August 2014
Exciton valley dynamics probed by Kerr rotation in WSe 2 monolayers Zhu, C. R.; Zhang, K.; Glazov, M. Physical Review B, Vol. 90, Issue 16 https://doi.org/10.1103/PhysRevB.90.161302	journal	October 2014
High intrinsic mobility and ultrafast carrier dynamics in multilayer metal-dichalcogenide MoS 2 Strait, Jared H.; Nene, Parinita; Rana, Farhan Physical Review B, Vol. 90, Issue 24 https://doi.org/10.1103/PhysRevB.90.245402	journal	December 2014
Giant and tunable valley degeneracy splitting in MoTe 2 Qi, Jingshan; Li, Xiao; Niu, Qian Physical Review B, Vol. 92, Issue 12 https://doi.org/10.1103/PhysRevB.92.121403	journal	September 2015
Atomically Thin MoS2 A New Direct-Gap Semiconductor Mak, Kin Fai; Lee, Changgu; Hone, James Physical Review Letters, Vol. 105, Issue 13, Article No.136805 https://doi.org/10.1103/PhysRevLett.105.136805	journal	September 2010
Carrier and Polarization Dynamics in Monolayer MoS 2 Lagarde, D.; Bouet, L.; Marie, X. Physical Review Letters, Vol. 112, Issue 4 https://doi.org/10.1103/PhysRevLett.112.047401	journal	January 2014
Tightly Bound Excitons in Monolayer WSe 2 He, Keliang; Kumar, Nardeep; Zhao, Liang Physical Review Letters, Vol. 113, Issue 2 https://doi.org/10.1103/PhysRevLett.113.026803	journal	July 2014
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS 2 Chernikov, Alexey; Berkelbach, Timothy C.; Hill, Heather M. Physical Review Letters, Vol. 113, Issue 7 https://doi.org/10.1103/PhysRevLett.113.076802	journal	August 2014
Light-Induced Subpicosecond Lattice Symmetry Switch in MoTe 2 Zhang, M. Y.; Wang, Z. X.; Li, Y. N. Physical Review X, Vol. 9, Issue 2 https://doi.org/10.1103/PhysRevX.9.021036	journal	May 2019
Electric Field Effect in Atomically Thin Carbon Films Novoselov, K. S. Science, Vol. 306, Issue 5696, p. 666-669 https://doi.org/10.1126/science.1102896	journal	October 2004
Superconducting Dome in a Gate-Tuned Band Insulator Ye, J. T.; Zhang, Y. J.; Akashi, R. Science, Vol. 338, Issue 6111 https://doi.org/10.1126/science.1228006	journal	November 2012
Phase patterning for ohmic homojunction contact in MoTe2 Cho, S.; Kim, S.; Kim, J. H. Science, Vol. 349, Issue 6248 https://doi.org/10.1126/science.aab3175	journal	August 2015
Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe ₂ Xu, Xiaolong; Pan, Yu; Liu, Shuai Science, Vol. 372, Issue 6538 https://doi.org/10.1126/science.abf5825	journal	April 2021
Electronic structure of transition metal dichalcogenides monolayers 1H-MX₂ (M = Mo, W; X = S, Se, Te) from ab-initio theory: new direct band gap semiconductors Kumar, A.; Ahluwalia, P. K. The European Physical Journal B, Vol. 85, Issue 6, Article No. 186 https://doi.org/10.1140/epjb/e2012-30070-x	journal	June 2012

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36 MATERIALS SCIENCE
electrical energy
energy
energy relaxation time
excitons
molybdenum telluride (MoTe2)
multiple phases
optical properties
phase transitions
photocarrier dynamics
recombination lifetime
transient absorption

Photocarrier Dynamics in MoTe2 Nanofilms with 2H and Distorted 1T Lattice Structures

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Photocarrier Dynamics in MoTe₂ Nanofilms with 2H and Distorted 1T Lattice Structures