Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications

Fu, Yang; He, Dawei; He, Jiaqi; Han, Xiuxiu; Bai, Jinxuan; Wang, Yongsheng; Zhao, Hui

doi:10.1021/acsanm.0c01448

Title: Photocarrier Dynamics in TlGaS₂ Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS₂ Nanoflakes: Implications for Optoelectronic Applications

Journal Article · Thu Aug 06 00:00:00 EDT 2020 · ACS Applied Nano Materials

DOI:https://doi.org/10.1021/acsanm.0c01448· OSTI ID:1772341

^[1]; He, Dawei ^[1]; He, Jiaqi ^[2]; Han, Xiuxiu ^[1]; Bai, Jinxuan ^[1]; Wang, Yongsheng ^[1];

^[3]

Beijing Jiaotong Univ. (China)
Beijing Univ. of Chemical Technology (China)
Univ. of Kansas, Lawrence, KS (United States)

We present an experimental investigation on photocarrier dynamics in a TlGaS₂ bulk crystal and its heterostructures with hexagonal BN and WS₂. The samples were obtained by mechanical exfoliation and dry transfer techniques. The photocarrier dynamics was monitored by a transient absorption technique. We observed a direct optical transition of about 555 nm in the TlGaS₂ crystal. By utilizing transient absorption of that transition, we obtained a hot-carrier energy relaxation time of less than 1 ps and a carrier lifetime of about 300 ps in TlGaS₂ at room temperature. In the hexagonal-BN-TlGaS₂ heterostructure, the photocarrier dynamics was similar to that in TlGaS₂, indicating the type-I band alignment of this structure with both band extremes located in TlGaS₂. In the monolayer WS₂-TlGaS₂ heterostructure, we observed charge transfer from TlGaS₂ to WS₂ and an extended lifetime of the transferred carriers in WS₂. Here, these results introduce TlGaS₂ as a promising layered material for developing two-dimensional van der Waals materials that can be combined with other two-dimensional materials for various optoelectronic devices.

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Research Organization:: Univ. of Kansas, Lawrence, KS (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0020995

OSTI ID:: 1772341

Journal Information:: ACS Applied Nano Materials, Vol. 3, Issue 9; ISSN 2574-0970

Publisher:: American Chemical Society (ACS)Copyright Statement

Country of Publication:: United States

Language:: English

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Title: Photocarrier Dynamics in TlGaS2 Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS2 Nanoflakes: Implications for Optoelectronic Applications

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Title: Photocarrier Dynamics in TlGaS₂ Nanoflakes and van der Waals Heterostructures with Hexagonal Boron Nitride and WS₂ Nanoflakes: Implications for Optoelectronic Applications