Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

Conference · Thu Oct 01 00:00:00 EDT 2020

DOI:https://doi.org/10.1109/ECCE44975.2020.9236121· OSTI ID:1760095

Ni, Ze ^[1]; Zheng, Sheng  ^[2]; Chinthavali, Madhu Sudhan  ^[2]; Cao, Dong ^[3]

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1. North Dakota State University
2. ORNL
3. University of Dayton, Ohio

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Electricity (OE)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1760095
• Resource Relation: Conference: 2020 IEEE Energy Conversion Congress and Exposition (ECCE) - Detroit, Michigan, United States of America - 10/11/2020 4:00:00 AM-10/15/2020 4:00:00 AM
• Country of Publication: United States
• Language: English