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Title: Crystallographic Chemical Wet Etching of GaN abd AlGaN Nanostructures.

Conference ·
OSTI ID:1641113

Abstract not provided.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1641113
Report Number(s):
SAND2019-7833C; 677233
Resource Relation:
Conference: Proposed for presentation at the 13th International Conference on Nitride Semiconductors 2019 (ICNS-13) held July 7-12, 2019 in Bellevue, WA.
Country of Publication:
United States
Language:
English