Crystallographic Phosphoric Acid etching of GaN AlGaN and AlN Nanostructures.
Conference
·
OSTI ID:1821085
Abstract not provided.
- Research Organization:
- Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE National Nuclear Security Administration (NNSA)
- DOE Contract Number:
- NA0003525
- OSTI ID:
- 1821085
- Report Number(s):
- SAND2020-9587C; 690525
- Country of Publication:
- United States
- Language:
- English
Similar Records
Crystallographic Chemical Wet Etching of GaN abd AlGaN Nanostructures.
Acid-Based Crystallographic Chemical Wet Etching of GaN Nanostructures.
Crystallographic Etching of GaN: Fundamentals and Applications to Nanostructure Synthesis [Poster]
Conference
·
Mon Jul 01 00:00:00 EDT 2019
·
OSTI ID:1641113
Acid-Based Crystallographic Chemical Wet Etching of GaN Nanostructures.
Conference
·
Sat Jun 01 00:00:00 EDT 2019
·
OSTI ID:1640641
Crystallographic Etching of GaN: Fundamentals and Applications to Nanostructure Synthesis [Poster]
Conference
·
Mon Nov 30 23:00:00 EST 2015
·
OSTI ID:1338032