Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Crystallographic Etching of GaN: Fundamentals and Applications to Nanostructure Synthesis [Poster]

Conference ·
OSTI ID:1338032

Abstract not provided.

Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE National Nuclear Security Administration (NNSA)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
1338032
Report Number(s):
SAND2015-10469D; 614659
Country of Publication:
United States
Language:
English

Similar Records

Acid-Based Crystallographic Chemical Wet Etching of GaN Nanostructures.
Conference · Sat Jun 01 00:00:00 EDT 2019 · OSTI ID:1640641

Crystallographic Chemical Wet Etching of GaN abd AlGaN Nanostructures.
Conference · Mon Jul 01 00:00:00 EDT 2019 · OSTI ID:1641113

Geometric Aspects of GaN Crystallographic Etching and Photonic Applications.
Conference · Tue Sep 01 00:00:00 EDT 2015 · OSTI ID:1326350

Related Subjects