Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

Chen, Cheng; Wang, Meixiao; Wu, Jinxiong; Fu, Huixia; Yang, Haifeng; Tian, Zhen; Tu, Teng; Peng, Han; Sun, Yan; Xu, Xiang; Jiang, Juan; Schröter, Niels B.  M.; Li, Yiwei; Pei, Ding; Liu, Shuai; Ekahana, Sandy A.; Yuan, Hongtao; Xue, Jiamin; Li, Gang; Jia, Jinfeng; Liu, Zhongkai; Yan, Binghai; Peng, Hailin; Chen, Yulin

doi:10.1126/sciadv.aat8355

Title: Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi₂O₂Se

Journal Article · Fri Sep 14 00:00:00 EDT 2018 · Science Advances

DOI:https://doi.org/10.1126/sciadv.aat8355· OSTI ID:1625997

^[1]; Wang, Meixiao ^[2]; Wu, Jinxiong ^[3]; Fu, Huixia ^[4]; Yang, Haifeng ^[2]; Tian, Zhen ^[2]; Tu, Teng ^[3];

^[1]; Sun, Yan ^[5]; Xu, Xiang ^[6];

^[7];

^[8]; Li, Yiwei ^[1]; Pei, Ding ^[1]; Liu, Shuai ^[2];

^[1]; Yuan, Hongtao ^[9]; Xue, Jiamin ^[2];

^[2]; Jia, Jinfeng ^[10] more »

Univ. of Oxford (United Kingdom). Dept. of Physics
Chinese Academy of Sciences (CAS), Shanghai (China). ShanghaiTech Univ. Shanghai Science Research Center. School of Physical Science and Technology
Peking Univ., Beijing (China). College of Chemistry and Molecular Engineering. Beijing National Lab. for Molecular Sciences. Center for Nanochemistry
Weizmann Inst. of Science, Rehovot (Israel). Dept. of Condensed Matter Physics
Max Planck Society, Dresden (Germany). Max Planck Inst. for Chemical Physics of Solids
Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics. Dept. of Physics; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS)
Chinese Academy of Sciences (CAS), Shanghai (China). ShanghaiTech Univ. Shanghai Science Research Center. School of Physical Science and Technology; Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Advanced Light Source (ALS); Pohang Univ. of Science and Technology (POSTECH) (Korea, Republic of). Accelerator Lab.
Univ. of Oxford (United Kingdom). Dept. of Physics; Paul Scherrer Inst. (PSI), Villigen (Switzerland)
Nanjing Univ. (China). Collaborative Innovation Center of Advanced Microstructures. College of Engineering and Applied Sciences. National Lab. of Solid-State Microstructures
Shanghai Jiao Tong Univ. (China). Dept. of Physics and Astronomy. Key Lab. of Artificial Structures and Quantum Control (Ministry of Education)
Univ. of Oxford (United Kingdom). Dept. of Physics; Chinese Academy of Sciences (CAS), Shanghai (China). ShanghaiTech Univ. Shanghai Science Research Center. School of Physical Science and Technology; Tsinghua Univ., Beijing (China). State Key Lab. of Low Dimensional Quantum Physics. Dept. of Physics

Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi₂O₂Se, with ultrahigh mobility (~2.8 × 10⁵cm²/V∙s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi₂O₂Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi₂O₂Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi₂O₂Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO₃) further makes heterostructures between Bi₂O₂Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.

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Research Organization:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 1625997

Journal Information:: Science Advances, Vol. 4, Issue 9; ISSN 2375-2548

Publisher:: AAASCopyright Statement

Country of Publication:: United States

Language:: English

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Improved thermoelectric performance of bilayer Bi ₂ O ₂ Se by the band convergence approach Li, Menglu; Wang, Ning; Jiang, Ming Journal of Materials Chemistry C, Vol. 7, Issue 35 https://doi.org/10.1039/c9tc02188d	journal	January 2019
Surface electronic structure of bismuth oxychalcogenides Eremeev, S. V.; Koroteev, Y. M.; Chulkov, E. V. Physical Review B, Vol. 100, Issue 11 https://doi.org/10.1103/physrevb.100.115417	journal	September 2019
Bolometric Effect in Bi ₂ O ₂ Se Photodetectors Yang, Hang; Tan, Congwei; Deng, Chuyun Small, Vol. 15, Issue 43 https://doi.org/10.1002/smll.201904482	journal	September 2019
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Infrared and Raman spectra of Bi ₂ O ₂ X and Bi ₂ OX ₂ (X = S, Se, and Te) studied from first principles calculations Xu, Yao-Di; Wang, Cong; Lv, Yang-Yang RSC Advances, Vol. 9, Issue 31 https://doi.org/10.1039/c9ra02584g	journal	January 2019
Optical Properties and Photocarrier Dynamics of Bi ₂ O ₂ Se Monolayer and Nanoplates Liu, Shuangyan; Tan, Congwei; He, Dawei Advanced Optical Materials, Vol. 8, Issue 6 https://doi.org/10.1002/adom.201901567	journal	March 2020
Sensitive and Ultrabroadband Phototransistor Based on Two‐Dimensional Bi ₂ O ₂ Se Nanosheets Tong, Tong; Chen, Yunfeng; Qin, Shuchao Advanced Functional Materials, Vol. 29, Issue 50 https://doi.org/10.1002/adfm.201905806	journal	September 2019
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