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Title: High-Q CMOS-integrated photonic crystal microcavity devices

Journal Article · · Scientific Reports
DOI:https://doi.org/10.1038/srep04077· OSTI ID:1624691
 [1];  [1];  [2];  [2];  [3];  [4];  [1]
  1. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Electrical Engineering and Computer Science and Research Lab. of Electronics
  2. Micron Semiconductor Israel, Kiryat-Gat (Israel)
  3. Micron Technology, Inc., San Jose, CA (United States). Process R&D
  4. Micron Technology, Inc., Boise, ID (United States). Process R&D

Integrated optical resonators are necessary or beneficial in realizations of various functions in scaled photonic platforms, including filtering, modulation, and detection in classical communication systems, optical sensing, as well as addressing and control of solid state emitters for quantum technologies. Although photonic crystal (PhC) microresonators can be advantageous to the more commonly used microring devices due to the former’s low mode volumes, fabrication of PhC cavities has typically relied on electron-beam lithography, which precludes integration with large-scale and reproducible CMOS fabrication. Here, we demonstrate wavelength-scale polycrystalline silicon (pSi) PhC microresonators with Qs up to 60,000 fabricated within a bulk CMOS process. Quasi-1D resonators in lateral p-i-n structures allow for resonant defect-state photodetection in all-silicon devices, exhibiting voltage-dependent quantum efficiencies in the range of a few 10 s of %, few-GHz bandwidths, and low dark currents, in devices with loaded Qs in the range of 4,300–9,300; one device, for example, exhibited a loaded Q of 4,300, 25% quantum efficiency (corresponding to a responsivity of 0.31 A/W), 3 GHz bandwidth, and 30 nA dark current at a reverse bias of 30 V. This work demonstrates the possibility for practical integration of PhC microresonators with active electro-optic capability into large-scale silicon photonic systems.

Research Organization:
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
Sponsoring Organization:
USDOE Office of Science (SC)
OSTI ID:
1624691
Journal Information:
Scientific Reports, Vol. 4, Issue 1; ISSN 2045-2322
Publisher:
Nature Publishing GroupCopyright Statement
Country of Publication:
United States
Language:
English

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Cited By (10)

Photonic crystal nanocavity with a Q factor exceeding eleven million journal January 2017
Photonic crystals with plasmonic patterns: novel type of the heterostructures for enhanced magneto-optical activity journal February 2015
Implementing a Raman silicon nanocavity laser for integrated optical circuits by using a (100) SOI wafer with a 45-degree-rotated top silicon layer journal January 2019
Ultrahigh- Q Photonic Nanocavity Devices on a Dual Thickness SOI Substrate Operating at Both 1.31- and 1.55-µm Telecommunication Wavelength Bands journal January 2019
Ultrahigh-Q optomechanical crystal cavities fabricated in a CMOS foundry journal May 2017
State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths: State-of-the-art all-silicon sub-bandgap photodetectors at telecom and datacom wavelengths journal September 2016
Sub-bandgap polysilicon photodetector in zero-change CMOS process for telecommunication wavelength journal January 2015
Precise and diffraction-limited waveguide-to-free-space focusing gratings journal May 2017
Recent advances in silicon-based passive and active optical interconnects journal January 2015
Precise and diffraction-limited waveguide-to-free-space focusing gratings text January 2016

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