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High-bandwidth CMOS-voltage-level electro-optic modulation of 780 nm light in thin-film lithium niobate

Journal Article · · Optics Express
DOI:https://doi.org/10.1364/OE.460119· OSTI ID:1871769

Integrated photonics operating at visible-near-infrared (VNIR) wavelengths offer scalable platforms for advancing optical systems for addressing atomic clocks, sensors, and quantum computers. The complexity of free-space control optics causes limited addressability of atoms and ions, and this remains an impediment on scalability and cost. Networks of Mach-Zehnder interferometers can overcome challenges in addressing atoms by providing high-bandwidth electro-optic control of multiple output beams. Here, we demonstrate a VNIR Mach-Zehnder interferometer on lithium niobate on sapphire with a CMOS voltage-level compatible full-swing voltage of 4.2 V and an electro-optic bandwidth of 2.7 GHz occupying only 0.35 mm 2 . Our waveguides exhibit 1.6 dB/cm propagation loss and our microring resonators have intrinsic quality factors of 4.4 × 10 5 . This specialized platform for VNIR integrated photonics can open new avenues for addressing large arrays of qubits with high precision and negligible cross-talk.

Research Organization:
SLAC National Accelerator Laboratory (SLAC), Menlo Park, CA (United States); Stanford Univ., CA (United States)
Sponsoring Organization:
National Science Foundation; USDOE
Grant/Contract Number:
AC02-76SF00515
OSTI ID:
1871769
Alternate ID(s):
OSTI ID: 2427394
OSTI ID: 1871694
Journal Information:
Optics Express, Journal Name: Optics Express Journal Issue: 13 Vol. 30; ISSN 1094-4087; ISSN OPEXFF
Publisher:
Optical Society of AmericaCopyright Statement
Country of Publication:
United States
Language:
English

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