Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Taz, Humaira; Prasad, Bhagwati; Huang, Yen-Lin; Chen, Zuhuang; Hsu, Shang-Lin; Xu, Ruijuan; Thakare, Vishal; Sakthivel, Tamil Selvan; Liu, Chenze; Hettick, Mark; Mukherjee, Rupam; Seal, Sudipta; Martin, Lane W.; Javey, Ali; Duscher, Gerd; Ramesh, Ramamoorthy; Kalyanaraman, Ramki

doi:10.1038/s41598-020-58592-5

Title: Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Journal Article · Thu Feb 27 00:00:00 EST 2020 · Scientific Reports

DOI:https://doi.org/10.1038/s41598-020-58592-5· OSTI ID:1603633

Taz, Humaira ^[1]; Prasad, Bhagwati ^[2]; Huang, Yen-Lin ^[2]; Chen, Zuhuang ^[3]; Hsu, Shang-Lin ^[2]; Xu, Ruijuan ^[2]; Thakare, Vishal ^[2]; Sakthivel, Tamil Selvan ^[4]; Liu, Chenze ^[5]; Hettick, Mark ^[2]; Mukherjee, Rupam ^[6]; Seal, Sudipta ^[4]; Martin, Lane W. ^[7]; Javey, Ali ^[2]; Duscher, Gerd ^[5]; Ramesh, Ramamoorthy ^[1]; Kalyanaraman, Ramki ^[5]

Univ. of California, Berkeley, CA (United States); Univ. of Tennessee, Knoxville, TN (United States)
Univ. of California, Berkeley, CA (United States)
Univ. of California, Berkeley, CA (United States); Harbin Inst. of Technology, Shenzhen (China)
Univ. of Central Florida, Orlando, FL (United States)
Univ. of Tennessee, Knoxville, TN (United States)
Lovely Professional Univ., Phagwara, Punjab (India)
Univ. of California, Berkeley, CA (United States); Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

A room temperature amorphous ferromagnetic oxide semiconductor can substantially reduce the cost and complexity associated with utilizing crystalline materials for spintronic devices. We report a new material (Fe_0.66Dy_0.24Tb_0.1)₃O_7-x (FDTO), which shows semiconducting behavior with reasonable electrical conductivity (~500 mOhm-cm), an optical band-gap (2.4 eV), and a large enough magnetic moment (~200 emu/cc), all of which can be tuned by varying the oxygen content during deposition. Magnetoelectric devices were made by integrating ultrathin FDTO with multiferroic BiFeO₃. A strong enhancement in the magnetic coercive field of FDTO grown on BiFeO₃ validated a large exchange coupling between them. Additionally, FDTO served as an excellent top electrode for ferroelectric switching in BiFeO3 with no sign of degradation after ~10¹⁰ switching cycles. RT magneto-electric coupling was demonstrated by modulating the resistance states of spin-valve structures using electric fields.

View Accepted Manuscript (DOE)

Cite

Export

Save

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22). Materials Sciences & Engineering Division; National Science Foundation (NSF); US Army Research Office (ARO)

Grant/Contract Number:: AC02-05CH11231; W911NF-13-1-0428; SC0004993; DMR-1708615; W911NF-14-1-0104

OSTI ID:: 1603633

Journal Information:: Scientific Reports, Vol. 10, Issue 1; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

Citation Metrics:

Cited by: 12 works

Citation information provided by
Web of Science

References (39)

Dilute magnetic semiconducting oxides Pearton, S. J.; Heo, W. H.; Ivill, M. Semiconductor Science and Technology, Vol. 19, Issue 10 https://doi.org/10.1088/0268-1242/19/10/R01	journal	August 2004
Electric field control of magnetism using BiFeO ₃ -based heterostructures Heron, J. T.; Schlom, D. G.; Ramesh, R. Applied Physics Reviews, Vol. 1, Issue 2 https://doi.org/10.1063/1.4870957	journal	June 2014
Transparent amorphous oxide semiconductors for organic electronics: Application to inverted OLEDs Hosono, Hideo; Kim, Junghwan; Toda, Yoshitake Proceedings of the National Academy of Sciences, Vol. 114, Issue 2 https://doi.org/10.1073/pnas.1617186114	journal	December 2016
High-Performance Solution-Processed Amorphous Zinc−Indium−Tin Oxide Thin-Film Transistors Kim, Myung-Gil; Kim, Hyun Sung; Ha, Young-Geun Journal of the American Chemical Society, Vol. 132, Issue 30 https://doi.org/10.1021/ja100615r	journal	August 2010
A model for the anomalous magnetoresistance in amorphous semiconductors Movaghar, B.; Schweitzer, L. Journal of Physics C: Solid State Physics, Vol. 11, Issue 1 https://doi.org/10.1088/0022-3719/11/1/023	journal	January 1977
Reliable polarization switching of BiFeO ₃ Baek, S. H.; Eom, C. B. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, Vol. 370, Issue 1977 https://doi.org/10.1098/rsta.2012.0197	journal	October 2012
Scalable energy-efficient magnetoelectric spin–orbit logic Manipatruni, Sasikanth; Nikonov, Dmitri E.; Lin, Chia-Ching Nature, Vol. 565, Issue 7737 https://doi.org/10.1038/s41586-018-0770-2	journal	December 2018
The electro-optical properties of amorphous indium tin oxide films prepared at room temperature by pulsed laser deposition Adurodija, F. O.; Izumi, H.; Ishihara, T. Solar Energy Materials and Solar Cells, Vol. 71, Issue 1 https://doi.org/10.1016/S0927-0248(01)00037-X	journal	January 2002
Reversible electric control of exchange bias in a multiferroic field-effect device Wu, S. M.; Cybart, Shane A.; Yu, P. Nature Materials, Vol. 9, Issue 9 https://doi.org/10.1038/nmat2803	journal	July 2010
Dilute magnetic oxides Coey, J. Current Opinion in Solid State and Materials Science, Vol. 10, Issue 2 https://doi.org/10.1016/j.cossms.2006.12.002	journal	April 2006
Large positive room temperature magnetoresistance in nanogranular FeCo–Si–N thin films Zeng, Y. P.; Liu, Z. W.; Yu, H. Y. Materials Letters, Vol. 110 https://doi.org/10.1016/j.matlet.2013.07.125	journal	November 2013
Amorphous zinc-doped silicon oxide (SZO) resistive switching memory: manipulated bias control from selector to memristor Huang, Jian-Shiou; Yen, Wen-Chun; Lin, Shih-Ming J. Mater. Chem. C, Vol. 2, Issue 22 https://doi.org/10.1039/C3TC32166E	journal	January 2014
Amorphous Vanadium Oxide/Carbon Composite Positive Electrode for Rechargeable Aluminum Battery Chiku, Masanobu; Takeda, Hiroki; Matsumura, Shota ACS Applied Materials & Interfaces, Vol. 7, Issue 44 https://doi.org/10.1021/acsami.5b06420	journal	October 2015
Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium Dioxide Matsumoto, Y. Science, Vol. 291, Issue 5505 https://doi.org/10.1126/science.1056186	journal	January 2001
Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application Hosono, Hideo Journal of Non-Crystalline Solids, Vol. 352, Issue 9-20 https://doi.org/10.1016/j.jnoncrysol.2006.01.073	journal	June 2006
Material characteristics and applications of transparent amorphous oxide semiconductors Kamiya, Toshio; Hosono, Hideo NPG Asia Materials, Vol. 2, Issue 1 https://doi.org/10.1038/asiamat.2010.5	journal	January 2010
Novel Iron-based ternary amorphous oxide semiconductor with very high transparency, electronic conductivity and mobility Malasi, A.; Taz, H.; Farah, A. Scientific Reports, Vol. 5, Issue 1 https://doi.org/10.1038/srep18157	journal	December 2015
A ten-year perspective on dilute magnetic semiconductors and oxides Dietl, Tomasz Nature Materials, Vol. 9, Issue 12 https://doi.org/10.1038/nmat2898	journal	November 2010
Magnetoresistance sign change in iron-doped amorphous carbon films at low temperatures Wang, Jimin; Zhang, Xiaozhong; Wan, Caihua Journal of Physics D: Applied Physics, Vol. 47, Issue 21 https://doi.org/10.1088/0022-3727/47/21/215002	journal	May 2014
The Nature of Polarization Fatigue in BiFeO3 Baek, Seung-Hyub; Folkman, Chad M.; Park, Jae-Wan Advanced Materials, Vol. 23, Issue 14 https://doi.org/10.1002/adma.201003612	journal	February 2011
Transparent ferromagnetic and semiconducting behavior in Fe-Dy-Tb based amorphous oxide films Taz, H.; Sakthivel, T.; Yamoah, N. K. Scientific Reports, Vol. 6, Issue 1 https://doi.org/10.1038/srep27869	journal	June 2016
Electronic Properties of Doped Semiconductors Shklovskii, Boris I.; Efros, Alex L. Springer Series in Solid-State Sciences https://doi.org/10.1007/978-3-662-02403-4	book	January 1984
Bismuth oxide coated amorphous manganese dioxide for electrochemical capacitors Li, Xiaofeng; Zhang, Linsen; Dong, Huichao Solid State Sciences, Vol. 43 https://doi.org/10.1016/j.solidstatesciences.2015.03.019	journal	May 2015
Giant Electric Field Tuning of Magnetic Properties in Multiferroic Ferrite/Ferroelectric Heterostructures Liu, Ming; Obi, Ogheneyunume; Lou, Jing Advanced Functional Materials, Vol. 19, Issue 11 https://doi.org/10.1002/adfm.200801907	journal	June 2009
Structural, magnetic, and transport properties of high-quality epitaxial Sr2FeMoO6 thin films prepared by pulsed laser deposition Sánchez, D.; García-Hernández, M.; Auth, N. Journal of Applied Physics, Vol. 96, Issue 5 https://doi.org/10.1063/1.1774244	journal	September 2004
Challenges for semiconductor spintronics Awschalom, David D.; Flatté, Michael E. Nature Physics, Vol. 3, Issue 3 https://doi.org/10.1038/nphys551	journal	March 2007
Multiferroic magnetoelectric coupling effect of bilayer La 1.2 Sr 1.8 Mn 2 O 7 /PbZr 0.3 Ti 0.7 O 3 complex thin film Liang, K.; Zhou, P.; Ma, Z. J. Physics Letters A, Vol. 381, Issue 17 https://doi.org/10.1016/j.physleta.2017.02.029	journal	May 2017
Present status of amorphous In–Ga–Zn–O thin-film transistors Kamiya, Toshio; Nomura, Kenji; Hosono, Hideo Science and Technology of Advanced Materials, Vol. 11, Issue 4 https://doi.org/10.1088/1468-6996/11/4/044305	journal	February 2010
Deterministic switching of ferromagnetism at room temperature using an electric field Heron, J. T.; Bosse, J. L.; He, Q. Nature, Vol. 516, Issue 7531 https://doi.org/10.1038/nature14004	journal	December 2014
Status and Perspectives of Multiferroic Magnetoelectric Composite Materials and Applications Palneedi, Haribabu; Annapureddy, Venkateswarlu; Priya, Shashank Actuators, Vol. 5, Issue 1 https://doi.org/10.3390/act5010009	journal	March 2016
Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples Hosono, Hideo; Kikuchi, Naoto; Ueda, Naoyuki Journal of Non-Crystalline Solids, Vol. 198-200 https://doi.org/10.1016/0022-3093(96)80019-6	journal	May 1996
Magnetoresistance of amorphous indium oxide films at the region of weak-strong localization crossover Lee, Y. J.; Kim, Y. S.; Shin, H. K. Journal of Physics: Condensed Matter, Vol. 14, Issue 3 https://doi.org/10.1088/0953-8984/14/3/316	journal	December 2001
Beyond CMOS computing with spin and polarization Manipatruni, Sasikanth; Nikonov, Dmitri E.; Young, Ian A. Nature Physics, Vol. 14, Issue 4 https://doi.org/10.1038/s41567-018-0101-4	journal	April 2018
Development of pinhole-free amorphous aluminum oxide protective layers for biomedical device applications Litvinov, Julia; Wang, Yi-Ju; George, Jinnie Surface and Coatings Technology, Vol. 224 https://doi.org/10.1016/j.surfcoat.2013.03.006	journal	June 2013
Tin-Based Amorphous Oxide: A High-Capacity Lithium-Ion-Storage Material Idota, Y. Science, Vol. 276, Issue 5317 https://doi.org/10.1126/science.276.5317.1395	journal	May 1997
Magnetoelectric Coupling in Bilayers of Pb(Zr, Ti)O ₃ Epoxy and Hot Pressed Manganite Perovskite Ning, Zhang; Xiao-Ming, Yin; Miao, Wang Chinese Physics Letters, Vol. 23, Issue 2 https://doi.org/10.1088/0256-307X/23/2/053	journal	January 2006
Evidence for superlocalization on a fractal network in conductive carbon-black–polymer composites van der Putten, D.; Moonen, J. T.; Brom, H. B. Physical Review Letters, Vol. 69, Issue 3 https://doi.org/10.1103/physrevlett.69.494	journal	July 1992
Optical Absorption and Infrared Photoconductivity in Amorphous Si–Au System Kishimoto, Naoki; Morigaki, Kazuo Journal of the Physical Society of Japan, Vol. 46, Issue 2 https://doi.org/10.1143/jpsj.46.497	journal	February 1979
Ferromagnetism in semiconductors and oxides: prospects from a ten years' perspective Dietl, Tomasz arXiv https://doi.org/10.48550/arxiv.1108.2582	text	January 2011

Similar Records

Giant magnetoelectric coupling interaction in BaTiO{sub 3}/BiFeO{sub 3}/BaTiO{sub 3} trilayer multiferroic heterostructures

Journal Article · Mon Aug 24 00:00:00 EDT 2015 · Applied Physics Letters · OSTI ID:1603633

Gupta, Rekha; Chaudhary, Sujeet

Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Applied Physics Letters · OSTI ID:1603633

Shah, Jyoti

Flexible Multiferroic Bulk Heterojunction with Giant Magnetoelectric Coupling via van der Waals Epitaxy

Journal Article · Mon May 22 00:00:00 EDT 2017 · ACS Nano · OSTI ID:1603633

Amrillah, Tahta; Bitla, Yugandhar; Shin, Kwangwoo; +12 more

Related Subjects

36 MATERIALS SCIENCE
materials science
nanoscience and technology
physics

Title: Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

Citation Formats

References (39)

Similar Records

Related Subjects