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Title: Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy

Abstract

Thin film of BaTiO{sub 3} doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO{sub 3} substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm{sup 2} and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film in presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10{sup −12} to 5.4 × 10{sup −11} F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.

Authors:
Publication Date:
OSTI Identifier:
22261593
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM; CHROMIUM; DOPED MATERIALS; ENERGY BEAM DEPOSITION; FERROELECTRIC MATERIALS; MAGNETIC PROPERTIES; STRONTIUM TITANATES; TEMPERATURE RANGE 0273-0400 K; THIN FILMS; X-RAY DIFFRACTION

Citation Formats

Shah, Jyoti, and Kotnala, Ravinder K., E-mail: rkkotnala@nplindia.org, E-mail: rkkotnala@gmail.com. Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy. United States: N. p., 2014. Web. doi:10.1063/1.4870263.
Shah, Jyoti, & Kotnala, Ravinder K., E-mail: rkkotnala@nplindia.org, E-mail: rkkotnala@gmail.com. Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy. United States. https://doi.org/10.1063/1.4870263
Shah, Jyoti, and Kotnala, Ravinder K., E-mail: rkkotnala@nplindia.org, E-mail: rkkotnala@gmail.com. 2014. "Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy". United States. https://doi.org/10.1063/1.4870263.
@article{osti_22261593,
title = {Magnetoelectric coupling of multiferroic chromium doped barium titanate thin film probed by magneto-impedance spectroscopy},
author = {Shah, Jyoti and Kotnala, Ravinder K., E-mail: rkkotnala@nplindia.org, E-mail: rkkotnala@gmail.com},
abstractNote = {Thin film of BaTiO{sub 3} doped with 0.1 at. % Cr (Cr:BTO) has been prepared by pulsed laser deposition technique. Film was deposited on Pt/SrTiO{sub 3} substrate at 500 °C in 50 mTorr Oxygen gas pressure using KrF (298 nm) laser. Polycrystalline growth of single phase Cr:BTO thin film has been confirmed by grazing angle X-ray diffraction. Cr:BTO film exhibited remnant polarization 6.4 μC/cm{sup 2} and 0.79 MV/cm coercivity. Magnetization measurement of Cr:BTO film showed magnetic moment 12 emu/cc. Formation of weakly magnetic domains has been captured by magnetic force microscopy. Theoretical impedance equation fitted to experimental data in Cole-Cole plot for thin film in presence of transverse magnetic field resolved the increase in grain capacitance from 4.58 × 10{sup −12} to 5.4 × 10{sup −11} F. Film exhibited high value 137 mV/cm-Oe magneto-electric (ME) coupling coefficient at room temperature. The high value of ME coupling obtained can reduce the typical processing steps involved in multilayer deposition to obtain multiferrocity in thin film. Barium titanate being best ferroelectric material has been tailored to be multiferroic by non ferromagnetic element, Cr, doping in thin film form opens an avenue for more stable and reliable spintronic material for low power magnetoelectric random excess memory applications.},
doi = {10.1063/1.4870263},
url = {https://www.osti.gov/biblio/22261593}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 104,
place = {United States},
year = {Mon Apr 07 00:00:00 EDT 2014},
month = {Mon Apr 07 00:00:00 EDT 2014}
}