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Title: Decomposition of ammonia on ZrB2(0001)

Journal Article · · Chemical Physics Letters
 [1];  [2]; ORCiD logo [2];  [3]
  1. Argonne National Lab. (ANL), Argonne, IL (United States); Lake Forest College, Lake Forest, IL (United States)
  2. Univ. of Illinois, Chicago, IL (United States)
  3. Argonne National Lab. (ANL), Argonne, IL (United States)

Zirconium diboride has been recently identified as a promising substrate for the growth of Group-III nitride semiconductors using reactive vapors that include ammonia as the nitrogen source. Adsorption energies and dissociation pathways of NH3 on the (0001) surface of ZrB2 were investigated using density functional theory calculations. Here, our results indicate that NH3 readily adsorbs onto the ZrB2 surface terminated with Zr and decomposes to atomic N and H with relatively small activation barriers. The resulting atomic species are found to be mobile with the computed diffusion barriers between 0.11 and 0.78 eV.

Research Organization:
Argonne National Laboratory (ANL), Argonne, IL (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES); National Science Foundation (NSF)
Grant/Contract Number:
AC02-06CH11357; CHE-1800236
OSTI ID:
1595942
Alternate ID(s):
OSTI ID: 1579267
Journal Information:
Chemical Physics Letters, Vol. 739, Issue C; ISSN 0009-2614
Publisher:
ElsevierCopyright Statement
Country of Publication:
United States
Language:
English
Citation Metrics:
Cited by: 3 works
Citation information provided by
Web of Science

References (42)

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Dissociation of trimethylgallium on the ZrB 2 (0001) surface
  • Manandhar, Kedar; Trenary, Michael; Otani, Shigeki
  • Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, Vol. 31, Issue 6 https://doi.org/10.1116/1.4826881
journal November 2013
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