A nitride-based epitaxial surface layer formed by ammonia treatment of silicene-terminated ZrB{sub 2}
- MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)
- School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi, Ishikawa 923-1292 (Japan)
We present a method for the formation of an epitaxial surface layer involving B, N, and Si atoms on a ZrB{sub 2}(0001) thin film on Si(111). It has the potential to be an insulating growth template for 2D semiconductors. The chemical reaction of NH{sub 3} molecules with the silicene-terminated ZrB{sub 2} surface was characterized by synchrotron-based, high-resolution core-level photoelectron spectroscopy and low-energy electron diffraction. In particular, the dissociative chemisorption of NH{sub 3} at 400 °C leads to surface nitridation, and subsequent annealing up to 830 °C results in a solid phase reaction with the ZrB{sub 2} subsurface layers. In this way, a new nitride-based epitaxial surface layer is formed with hexagonal symmetry and a single in-plane crystal orientation.
- OSTI ID:
- 22657893
- Journal Information:
- Journal of Chemical Physics, Vol. 144, Issue 13; Other Information: (c) 2016 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-9606
- Country of Publication:
- United States
- Language:
- English
Similar Records
On the feasibility of silicene encapsulation by AlN deposited using an atomic layer deposition process
Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2