Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB 2

Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; Prüser, Henning; Friedlein, Rainer; Sadowski, Jerzy T.; Hirjibehedin, Cyrus F.; Yamada-Takamura, Yukiko

doi:10.1088/2053-1583/aa5a80

Title: Metallic atomically-thin layered silicon epitaxially grown on silicene/ZrB ₂

Journal Article · Fri Feb 17 00:00:00 EST 2017 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/aa5a80· OSTI ID:1342651

Gill, Tobias G.; Fleurence, Antoine; Warner, Ben; Prüser, Henning; Friedlein, Rainer; Sadowski, Jerzy T.; Hirjibehedin, Cyrus F.; Yamada-Takamura, Yukiko

We observe a new two-dimensional (2D) silicon crystal, using low energy electron diffraction (LEED) and scanning tunnelling microscopy (STM) and it's formed by depositing additional Si atoms onto spontaneously-formed epitaxial silicene on a ZrB₂ thin film. From scanning tunnelling spectroscopy (STS) studies, we find that this atomically-thin layered silicon has distinctly different electronic properties. Angle resolved photoelectron spectroscopy (ARPES) reveals that, in sharp contrast to epitaxial silicene, the layered silicon exhibits significantly enhanced density of states at the Fermi level resulting from newly formed metallic bands. Furthermore, the 2D growth of this material could allow for direct contacting to the silicene surface and demonstrates the dramatic changes in electronic structure that can occur by the addition of even a single monolayer amount of material in 2D systems.

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Research Organization:: Brookhaven National Lab. (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC00112704

OSTI ID:: 1342651

Report Number(s):: BNL-113487-2017-JA; R&D Project: 16083/16083; KC0403020

Journal Information:: 2D Materials, Vol. 4, Issue 2; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 10 works

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