Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures

Rodriguez-Nieva, Joaquin F.; Dresselhaus, Mildred S.; Levitov, Leonid S.

doi:10.1021/nl502522q

Title: Thermionic Emission and Negative dI/dV in Photoactive Graphene Heterostructures

Journal Article · Wed Jan 28 00:00:00 EST 2015 · Nano Letters

DOI:https://doi.org/10.1021/nl502522q· OSTI ID:1557735

Rodriguez-Nieva, Joaquin F. ^[1]; Dresselhaus, Mildred S. ^[2]; Levitov, Leonid S. ^[1]

Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics
Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States). Dept. of Physics and Dept. of Electrical Engineering and Computer Science

Transport in photoactive graphene heterostructures, originating from the dynamics of photogenerated hot carriers, is governed by the processes of thermionic emission, electron–lattice thermal imbalance, and cooling. These processes give rise to interesting photoresponse effects, in particular negative differential resistance (NDR) arising in the hot-carrier regime. The NDR effect stems from a strong dependence of electron–lattice cooling on the carrier density, which results in the carrier temperature dropping precipitously upon increasing bias. Finally, the ON–OFF switching between the NDR regime and the conventional cold emission regime, as well as the gate-controlled closed-circuit current that is present at zero bias voltage, can serve as signatures of hot-carrier dominated transport.

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Research Organization:: Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES)

Grant/Contract Number:: SC0001088

OSTI ID:: 1557735

Journal Information:: Nano Letters, Vol. 15, Issue 3; ISSN 1530-6984

Publisher:: American Chemical SocietyCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 21 works

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