Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures

Poudel, Nirakar; Liang, Shi -Jun; Choi, David; Hou, Bingya; Shen, Lang; Shi, Haotian; Ang, Lay Kee; Shi, Li; Cronin, Stephen

doi:10.1038/s41598-017-12704-w

Title: Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures

Abstract

Here, the thermoelectric voltage generated at an atomically abrupt interface has not been studied exclusively because of the lack of established measurement tools and techniques. Atomically thin 2D materials provide an excellent platform for studying the thermoelectric transport at these interfaces. Here, we report a novel technique and device structure to probe the thermoelectric transport across Au/h-BN/graphene heterostructures. An indium tin oxide (ITO) transparent electrical heater is patterned on top of this heterostructure, enabling Raman spectroscopy and thermometry to be obtained from the graphene top electrode in situ under device operating conditions. Here, an AC voltage V(ω) is applied to the ITO heater and the thermoelectric voltage across the Au/h-BN/graphene heterostructure is measured at 2ω using a lock-in amplifier. We report the Seebeck coefficient for our thermoelectric structure to be –215 μV/K. The Au/graphene/h-BN heterostructures enable us to explore thermoelectric and thermal transport on nanometer length scales in a regime of extremely short length scales. The thermoelectric voltage generated at the graphene/h-BN interface is due to thermionic emission rather than bulk diffusive transport. As such, this should be thought of as an interfacial Seebeck coefficient rather than a Seebeck coefficient of the constituent materials.

Authors:

Poudel, Nirakar ^[1]; Liang, Shi -Jun ^[2]; Choi, David ^[3]; Hou, Bingya ^[1]; Shen, Lang ^[1]; Shi, Haotian ^[1]; Ang, Lay Kee ^[2];

^[3]; Cronin, Stephen ^[1]

Univ. of Southern California, Los Angeles, CA (United States)
Singapore Univ. of Technology and Design (SUTD) (Singapore)
Univ. of Texas, Austin, TX (United States)

Publication Date:: Thu Oct 26 00:00:00 EDT 2017

Research Org.:: Univ. of Southern California, Los Angeles, CA (United States); Univ. of Texas, Austin, TX (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 1500109

Grant/Contract Number:: FG02-07ER46376; FG02-07ER46377

Resource Type:: Journal Article: Accepted Manuscript

Journal Name:: Scientific Reports

Additional Journal Information:: Journal Volume: 7; Journal Issue: 1; Journal ID: ISSN 2045-2322

Publisher:: Nature Publishing Group

Country of Publication:: United States

Language:: English

Subject:: 42 ENGINEERING

Citation Formats


                    Poudel, Nirakar, Liang, Shi -Jun, Choi, David, Hou, Bingya, Shen, Lang, Shi, Haotian, Ang, Lay Kee, Shi, Li, and Cronin, Stephen. Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures.  United States: N. p., 2017. 
        Web.  doi:10.1038/s41598-017-12704-w.

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                    Poudel, Nirakar, Liang, Shi -Jun, Choi, David, Hou, Bingya, Shen, Lang, Shi, Haotian, Ang, Lay Kee, Shi, Li, & Cronin, Stephen. Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures.  United States.  https://doi.org/10.1038/s41598-017-12704-w

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                    Poudel, Nirakar, Liang, Shi -Jun, Choi, David, Hou, Bingya, Shen, Lang, Shi, Haotian, Ang, Lay Kee, Shi, Li, and Cronin, Stephen. 2017.  
        "Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures".  United States.  https://doi.org/10.1038/s41598-017-12704-w.  https://www.osti.gov/servlets/purl/1500109.

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@article{osti_1500109,

  title        = {Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures},

  author       = {Poudel, Nirakar and Liang, Shi -Jun and Choi, David and Hou, Bingya and Shen, Lang and Shi, Haotian and Ang, Lay Kee and Shi, Li and Cronin, Stephen},

  abstractNote = {Here, the thermoelectric voltage generated at an atomically abrupt interface has not been studied exclusively because of the lack of established measurement tools and techniques. Atomically thin 2D materials provide an excellent platform for studying the thermoelectric transport at these interfaces. Here, we report a novel technique and device structure to probe the thermoelectric transport across Au/h-BN/graphene heterostructures. An indium tin oxide (ITO) transparent electrical heater is patterned on top of this heterostructure, enabling Raman spectroscopy and thermometry to be obtained from the graphene top electrode in situ under device operating conditions. Here, an AC voltage V(ω) is applied to the ITO heater and the thermoelectric voltage across the Au/h-BN/graphene heterostructure is measured at 2ω using a lock-in amplifier. We report the Seebeck coefficient for our thermoelectric structure to be –215 μV/K. The Au/graphene/h-BN heterostructures enable us to explore thermoelectric and thermal transport on nanometer length scales in a regime of extremely short length scales. The thermoelectric voltage generated at the graphene/h-BN interface is due to thermionic emission rather than bulk diffusive transport. As such, this should be thought of as an interfacial Seebeck coefficient rather than a Seebeck coefficient of the constituent materials.},

  doi          = {10.1038/s41598-017-12704-w},

  url          = {https://www.osti.gov/biblio/1500109},
  journal      = {Scientific Reports},

  issn         = {2045-2322},

  number       = 1,

  volume       = 7,

  place        = {United States},

  year         = {Thu Oct 26 00:00:00 EDT 2017},

  month        = {Thu Oct 26 00:00:00 EDT 2017}

}

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Journal Article:

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https://doi.org/10.1038/s41598-017-12704-w

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Cited by: 13 works

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Figures / Tables:

Figure 1: Schematic diagram of the thermionic emission process, illustrated for a graphene/h- BN/Au heterostructure.

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Title: Cross-plane Thermoelectric and Thermionic Transport across Au/h-BN/Graphene Heterostructures

Abstract

Citation Formats

Figures / Tables:

Light-emitting diodes by band-structure engineering in van der Waals heterostructures journal, February 2015

Light-emitting diodes by band-structure engineering in van der Waals heterostructures journal, February 2015

Dual-Gated MoS 2 /WSe 2 van der Waals Tunnel Diodes and Transistors journal, January 2015

Thermal conductance and phonon transmissivity of metal–graphite interfaces journal, May 2010

Silicon layer intercalation of centimeter-scale, epitaxially grown monolayer graphene on Ru(0001) journal, February 2012

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Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition journal, May 2010

Current-Temperature Scaling for a Schottky Interface with Nonparabolic Energy Dispersion journal, September 2016

Dual-Gated MoS 2 /WSe 2 van der Waals Tunnel Diodes and Transistors journal, January 2015

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Reliability of Raman measurements of thermal conductivity of single-layer graphene due to selective electron-phonon coupling: A first-principles study journal, March 2016

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Heat Conduction across Monolayer and Few-Layer Graphenes text, January 2010

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Thermoelectric transport across graphene/hexagonal boron nitride/graphene heterostructures journal, September 2014

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journal, January 2015

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journal, September 1997

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journal, October 2011

Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
journal, April 2014

Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures
journal, February 2012

Graphene-Silicon Schottky Diodes
journal, May 2011

Heat Conduction across Monolayer and Few-Layer Graphenes
text, January 2010

Thermal contact resistance between graphene and silicon dioxide
journal, October 2009

Heat Conduction across Monolayer and Few-Layer Graphenes
journal, November 2010

Optical Generation and Detection of Local Nonequilibrium Phonons in Suspended Graphene
journal, February 2017

Photovoltaic Effect in an Electrically Tunable van der Waals Heterojunction
journal, July 2014

Measurement of the thermal conductance of the graphene/SiO2 interface
journal, November 2010

Calculation of ground-state and optical properties of boron nitrides in the hexagonal, cubic, and wurtzite structures
journal, October 1991

Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition
journal, May 2010

Thermoelectric transport across graphene/hexagonal boron nitride/graphene heterostructures
journal, September 2014

All Two-Dimensional, Flexible, Transparent, and Thinnest Thin Film Transistor
journal, April 2014

Thermionic Energy Conversion Based on Graphene van der Waals Heterostructures
journal, April 2017

Multilayer thermionic refrigerator and generator
journal, May 1998

Graphene-Silicon Schottky Diodes
journal, September 2011

Measuring nanoscale thermal gradients in suspended MoS ₂ with STEM-EELS
journal, October 2019

Thermionic transport across gold-graphene-WSe ₂ van der Waals heterostructures
journal, November 2019

Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction
journal, April 2018